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A fully-integrated 77-GHz pseudo-random noise coded Doppler radar sensor with programmable sequence generators in SiGe technology

2014 IEEE MTT-S International Microwave Symposium (IMS2014), 2014
This paper describes a fully-integrated 77-GHz distant-selective pseudo-random noise coded Doppler radar transceiver in a Silicon-Germanium technology. The transceiver is capable of measuring a vibration or a velocity of a target at a specified distance, which is programmable and can be configured very precisely in the transceiver, and suppressing all ...
Herman Jalli Ng   +2 more
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Design of a Wideband Low Noise Amplifier for a FMCW Synthetic Aperture Radar in 130 nm SiGe BiCMOS Technology

2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES), 2018
In this paper, design of a wideband low noise amplifier for a FMCW synthetic aperture radar is discussed. In the first part, the paper describes the fundamentals of Synthetic Aperture Radar (SAR) technique and Frequency Modulated Continuous Wave (FMCW) modulation. The solutions of wideband low-noise amplifiers are described subsequently.
Daniel Pietron   +3 more
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A Fully-Integrated 77-GHz UWB Pseudo-Random Noise Radar Transceiver With a Programmable Sequence Generator in SiGe Technology

IEEE Transactions on Circuits and Systems I: Regular Papers, 2014
This paper describes a fully-integrated 77-GHz ultra-wideband pseudo-random noise (PRN) radar transceiver in a Silicon-Germanium technology. The transceiver is equipped with a programmable pseudo-random binary sequence (PRBS) generator, which is realized in a current-mode logic topology and can be operated with a clock rate of up to 4.25 GHz to enable ...
Herman Jalli Ng   +2 more
openaire   +1 more source

A low-noise, and high-gain double-balanced mixer for 77 GHz automotive radar front-ends in SiGe bipolar technology

2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers, 2004
An active down-conversion mixer for automotive radar applications at 76 GHz to 81 GHz was realized in a 200 GHz f/sub T/ SiGe bipolar technology. A conversion gain of more than 24 dB and a single-sideband noise figure of less than 14 dB is achieved. The 1 dB output compression point is -4 dBm. The power consumption is 300 mW at -5 V supply voltage.
W. Perndl   +7 more
openaire   +1 more source

A low phase noise 24/77 GHz dual-band sub-sampling PLL for automotive radar applications in 65 nm CMOS technology

2013 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2013
A low phase noise 24/77 GHz dual-band subsampling PLL with a dual-band VCO is presented. Implemented in 65 nm CMOS technology, the proposed PLL occupies an area of 900 μm × 550 μm. The measured phase noise is -120.0 and -108.5 dBc/Hz at 1 MHz offset in 24 and 77 GHz modes respectively. With 1.3 V supply, the power consumption is 26.4 and 31.5 mW for 24
Xiang Yi   +4 more
openaire   +1 more source

A Low-Power Low-Noise Single-Chip Receiver Front-End for Automotive Radar at 77 GHz in Silicon-Germanium Bipolar Technology

2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2007
This paper presents a single chip receiver front-end, including low-noise amplifier and mixer, for application in automotive radar systems at 77 GHz. The circuit has been implemented in a SiGe HBT technology. The complete circuit occupies 1030 times 1130 mum2 including bond pads and dissipates 440 mW from a 5.5 V supply.
Marcus Hartmann   +5 more
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An area and phase noise improved 19-GHz down-converter VCO for 77-GHz automotive radar frontends in a SiGe Bipolar Production Technology

2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008
A down-converter including a voltage controlled oscillator (VCO), buffer, mixer, and prescaler is presented. The fully differential circuit configuration of the down-converter operates in a frequency range from 17.7 GHz to 19.4 GHz at a 5.5 V supply. The overall current consumption at room-temperature is 186 mA.
Florian Starzer   +5 more
openaire   +1 more source

Design for Failure Analysis in a 24 GHz Low-Noise Amplifier for Short Range Radar Applications Created in Silicon CMOS Technology

International Symposium for Testing and Failure Analysis, 2017
Abstract As the Internet of Things, smart factories and autonomous driving increase the demand for low-price radar sensors, the authors address this need by developing a 24 GHz short range radar in standard bulk silicon CMOS technology for mass market production.
Philipp Scholz   +6 more
openaire   +1 more source

Magnetic resonance linear accelerator technology and adaptive radiation therapy: An overview for clinicians

Ca-A Cancer Journal for Clinicians, 2022
William A Hal, X Allen Li, Daniel A Low
exaly  

Noise Radar Technology

Telecommunications and Radio Engineering, 2001
openaire   +1 more source

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