Results 101 to 110 of about 17,425,230 (281)

The onset of dissipation in high-temperature superconductors: Self-field experiments

open access: yesAIP Advances, 2017
The transport critical current, Ic, is usually defined in terms of a threshold electric field criterion, Ec, with the convention Ec = 1 μV/cm chosen somewhat arbitrarily to provide “reasonably small” electric power dissipation in practical devices.
E. F. Talantsev   +3 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Schwinger effect for non-Abelian gauge bosons

open access: yesPhysical Sciences and Technology, 2018
We investigate the Schwinger effect for the gauge bosons in an unbroken non-Abelian gauge theory ( e.g.the gluons of QCD). For the simplicity the SU 2 non-Abelian gauge theory is considered.
M. Ragsdale, D. Singleton
doaj  

Robust Electrocaloric Performance Enabled by Highly‐Polar Frustrated Nanodomains in NaNbO3‐Based Ferrodistortive Relaxor

open access: yesAdvanced Functional Materials, EarlyView.
P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.
Feng Li   +11 more
wiley   +1 more source

Photodetector array for measuring the spatial–temporal distribution characteristics of electric field in oil–pressboard insulation based on the Kerr electro‐optic effect

open access: yesHigh Voltage
Accurate measurement and effective analysis of the space electric field and charge characteristics within the oil–pressboard insulation structure of converter transformer are essential for achieving precise insulation structure design.
Chunjia Gao   +3 more
doaj   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo   +10 more
wiley   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu   +7 more
wiley   +1 more source

Hydrothermal synthesis of uniform and dense NaA zeolite membrane in the electric field

open access: yes, 2007
Uniform and dense NaA zeolite membranes were prepared on the tubular porous alpha-AI(2)O(3) supports in the electric field, where the charged zeolite particles attracted and transported to the support surface for membrane preparation homogeneously.
杨维慎, Huang, Aisheng, Yang, Weishen
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

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