Results 11 to 20 of about 12,145,528 (300)

Volatile aldehydes in libraries and archives [PDF]

, 2010
Volatile aldehydes are produced during degradation of paper-based materials. This may result in their accumulation in archival and library repositories. However, no systematic study has been performed so far.
Kolar, J., de Bruin, G., Irena Kralj Cigić, Gerrit de Bruin, Fenech, Ann, Levart, A., Fenech, A., Kralj Cigić, I., Levart, Alenka, Jana Kolar, Ntanos, Konstantinos, May Cassar, Cigic, Irena Kralj, Gibson, L.T., Ntanos, K., Kolar, Jana, Matija Strlič, Cassar, M., Konstantinos Ntanos, Gibson, Lorraine T., Lorraine T. Gibson, de Bruin, Gerrit, Cassar, May, Ann Fenech, Alenka Levart, Strlič, M.   +25 more
core   +5 more sources

Volatile and Non-Volatile Single Electron Memory [PDF]

Журнал нано- та електронної фізики, 2013
Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Devices (SED) in particular Single-Electron Memory (SEM).
A. Touati , A. Kalboussi 
doaj   +2 more sources

Non-volatile heterogeneous III-V/Si photonics via optical charge-trap memory [PDF]

, 2023
We demonstrate, for the first time, non-volatile charge-trap flash memory (CTM) co-located with heterogeneous III-V/Si photonics. The wafer-bonded III-V/Si CTM cell facilitates non-volatile optical functionality for a variety of devices such as Mach ...
Geza Kurczveil (10518965), Raymond G. Beausoleil (2094907), Yuan Yuan (25702), Stanley Cheung (3979142), Yiwei Peng (8771243), Di Liang (528190), Yingtao Hu (13594073)   +6 more
core   +2 more sources

Making non-volatile nanomagnet logic non-volatile [PDF]

Proceedings of the 49th Annual Design Automation Conference, 2012
Field-coupled nanomagnets can offer significant energy savings at iso-performance versus CMOS equivalents. Magnetic logic could be integrated with CMOS, operate in environments that CMOS cannot, and retain state without power. Clocking requirements lead to inherently pipelined circuits, and high throughput further improves application-level performance.
Aaron Dingler, Steve Kurtz, Michael T. Niemier, Xiaobo Sharon Hu, György Csaba, Joseph Nahas, Wolfgang Porod, Gary H. Bernstein, Peng Li, Vjiay Karthik Sankar   +9 more
openaire   +1 more source

Non-volatile storage [PDF]

Communications of the ACM, 2015
Implications of the datacenter's shifting center.
Mihir Nanavati, Malte Schwarzkopf, Jake Wires, Andrew Warfield   +3 more
openaire   +3 more sources

Non-equilibrium gliding arc and corona discharges for abatement of volatile organic compounds.

, 2002
Non-equilibrium gliding arc and corona discharges for abatement of volatile organic ...
Nikolay Yurevich. Kalashnikov (7986068)
core   +5 more sources

Coexistance of volatile and non-volatile memristive effects in phase-separated La$_{0.5}$Ca$_{0.5}$MnO$_{3}$-based devices [PDF]

, 2022
In this work, we have investigated the coexistance of volatile and non-volatile memristive effects in epitaxial phase-separated La$_{\text{0.5}}$Ca$_{\text{0.5}}$MnO$_{3}$ thin films.
Ramírez, G. A., Briático, J., Rengifo, Miguel, Ramírez, G., Briático, Javier, M. H. Aguirre, Aguirre, M. H., J. Briático, Román Acevedo, Wilson, Nuñez, J., Rubi, Diego, Nuñez, Jorge M., M. Rengifo, Ramírez, Gerardo, G. A. Ramírez, Aguirre, Myriam H., Nuñez, J. M., J. M. Nuñez, W. Román Acevedo, D. Rubi, Aguirre, M., Rengifo, M., Nuñez, Jorge Martín, Roman Acevedo, Wilson Stibens, Román Acevedo, W., Rubi, D., Aguirre, Myriam Haydee, Acevedo, W. Román   +27 more
core   +1 more source

Memristive Non-Volatile Memory Based on Graphene Materials

Micromachines, 2020
Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in ...
Zongjie Shen, Chun Zhao, Yanfei Qi, Ivona Z. Mitrovic, Li Yang, Jiacheng Wen, Yanbo Huang, Puzhuo Li, Cezhou Zhao   +8 more
doaj   +1 more source

A Novel Low Power and Reduced Transistor Count Magnetic Arithmetic Logic Unit Using Hybrid STT-MTJ/CMOS Circuit

IEEE Access, 2020
One of the major concern for CMOS technology is the increase in power dissipation as the technology node lowers down to deep submicron region. Magnetic tunnel junction (MTJ) working on Spin transfer torque (STT) switching mechanism is recognized as one ...
Prashanth Barla, Vinod Kumar Joshi, Somashekara Bhat   +2 more
doaj   +1 more source

Introduction to the Special Section on the 2018 IEEE S3S Conference

IEEE Journal of the Electron Devices Society, 2019
This special section of the IEEE Journal of Electron Devices Society is dedicated to select papers presented at the 2018 IEEE S3S Conference, which was held Oct. 15–18, 2018 in Burlingame, CA, USA.
Ali Khakifirooz, Nobuyuki Sugii
doaj   +1 more source