Results 141 to 150 of about 18,384 (300)

Automated synthesis of EDACs for FLASH Memories with User-Selectable Correction Capability [PDF]

, 2010
Piazza, R., Michele Fabiano, Miele A., Piazza R., Caramia, M., Caramia M., Miele, A., Fabiano, Michele, Paolo Prinetto, Prinetto, Paolo Ernesto, Andrea Miele, Roberto Piazza, Maurizio Caramia   +12 more
core   +1 more source

Development and study of non-volatile resistive memories based on graphene oxide

, 2014
LAUREA MAGISTRALEQuesto studio consisteva nello sviluppare e analizzare un tipo di memorie promettente : le memorie resistive non-volatili fatte di ossido di grafene.
ROBARD, FLORIAN
core  

Advanced Technologies for Characterizing and Detecting Battery Thermal Failure: A Review

Advanced Science, EarlyView.
Illustration of advanced characterization techniques to predict battery thermal failure. ABSTRACT Energy storage is essential in accelerating the global transition toward clean and sustainable energy across various sectors. Lithium‐ion batteries (LIBs) have become increasingly significant for energy storage due to their high energy density, low ...
Yongxiu Chen, Zeyu Sun, Wei Zong, Yuhang Dai, Kai Ling Ng, Paul R. Shearing   +5 more
wiley   +1 more source

Effect of mechanical loads on stability of nanodomains in ferroelectric ultrathin films: towards flexible erasing of the non-volatile memories. [PDF]

Sci Rep, 2014
Chen WJ, Zheng Y, Xiong WM, Feng X, Wang B, Wang Y.   +5 more
europepmc   +1 more source

Flash-memories in Space Applications: Trends and Challenges [PDF]

, 2009
Nowadays space applications are provided with a processing power absolutely overcoming the one available just a few years ago. Typical mission-critical space system applications include also the issue of solid-state recorder(s).
Caramia, M., Caramia M., Fabiano, Michele, Prinetto, Paolo Ernesto, Di Carlo, Stefano   +4 more
core  

Interlayer‐Sliding‐Enabled Multiferroicity and Giant Switchable Anomalous Hall Conductivity in RuO2Zn2F2 Bilayer

Advanced Science, EarlyView.
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Djamel Bezzerga, Imran Khan, Ganie Suhail Ahmad, Jisang Hong   +3 more
wiley   +1 more source

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips

Advanced Science, EarlyView.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang, Chuanpeng Jiang, Zhaohao Wang, Zhengyi Hou, Zhongkui Zhang, Yuanfu Zhao, Hong‐xi Liu, Weisheng Zhao   +7 more
wiley   +1 more source

Mn3SnN‐Based Antiferromagnetic Tunnel Junction with Giant Tunneling Magnetoresistance and Multi‐States: Design and Theoretical Validation

Advanced Science
Antiferromagnets have attracted widespread interest due to the advantages of no stray fields and ultrafast switching dynamics, promising for next‐generation high‐speed, high‐density memories.
Shiqi Liu, Tingwei Chen, Baochun Wu, Haodong Fan, Yingmei Zhu, Sheng Bi, Yuntian Liu, Yinuo Shi, Wenbiao Zhang, Mengxi Wang, Qiang Li, Jie Yang, Jing Lu, Tiejun Zhou, Bo Liu   +14 more
doaj   +1 more source

Constrained Codes and Signal Processing for Non-Volatile Memories [PDF]

, 2014
Non-volatile memories (NVMs) have attracted considerable attention as data storage media because of their fast read /write speed, high data throughput, large capacity, and low power consumption.
Qin, Minghai
core  

Ambipolar Organic–Inorganic Heterostructure Transistor Array for Integrated Visual Information Processing

Advanced Science, EarlyView.
We present an organic–inorganic heterostructure transistor array for neuromorphic computing, achieving 95.6% MNIST accuracy and 1.2 fJ per operation, with dynamic spatiotemporal encoding and precise vehicle direction detection under combined optical and electrical stimulation.
Wen‐Min Zhong, Wenbin Zhang, Yu‐Xiang Zeng, JiYu Zhao, Ziqi Jia, Loganathan Veeramuthu, Guanglong Ding, Yan Yan, Meng Zhang, Su‐Ting Han, Vellaisamy A. L. Roy, Fengyun Wang, Chi‐Ching Kuo, Ye Zhou   +13 more
wiley   +1 more source