Results 141 to 150 of about 10,456,685 (290)

High‐Throughput Screening and Interpretable Machine Learning for Rational Design of Bimetallic Catalysts for Methane Activation

Advanced Science, EarlyView.
ABSTRACT Methane's efficient catalytic removal is vital for sustainable development. Bimetallic catalysts, though promising for methane activation, pose a design challenge due to their complex compositional space. This work introduces an integrated framework that combines high‐throughput density functional theory (DFT) and interpretable machine ...
Mingzhang Pan, Tian Zhang, Jiawei Dong, Yubao Xie, Kaifeng Zhong, Wei Guan, Haiqiao Wei, Changcheng Fu, Yaqiong Su   +8 more
wiley   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

An Efficient Biological Codon Recognition Reservoir Computing System Based on Low‐Energy Epitaxial Hf0.52Zr0.48O2 Ferroelectric Memristors

Advanced Science, EarlyView.
This work reports on epitaxially grown Hf0.52Zr0.48O2 ferroelectric memristors with high stability (high durability exceeding 108 cycles and a retention time exceeding 104 s for 16 states) and ultra‐low operating energy consumption (∼121 fJ). A memristor array‐based reservoir computing system is constructed and applied for the first time in the field ...
Ying Liu, Jikang Xu, Yongqing Jia, Wenxuan Wang, Weifeng Zhang, Biao Yang, Xiaobing Yan   +6 more
wiley   +1 more source

Interlayer‐Sliding‐Enabled Multiferroicity and Giant Switchable Anomalous Hall Conductivity in RuO2Zn2F2 Bilayer

Advanced Science, EarlyView.
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Djamel Bezzerga, Imran Khan, Ganie Suhail Ahmad, Jisang Hong   +3 more
wiley   +1 more source

Contextual cues and transition statistics drive expression of competing motor memories. [PDF]

iScience
Kumar A, Kumar AD, Sannamath S, Kumar N.
europepmc   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Automated synthesis of EDACs for FLASH Memories with User-Selectable Correction Capability [PDF]

, 2010
Piazza, R., Michele Fabiano, Miele A., Piazza R., Caramia, M., Caramia M., Miele, A., Fabiano, Michele, Paolo Prinetto, Prinetto, Paolo Ernesto, Andrea Miele, Roberto Piazza, Maurizio Caramia   +12 more
core   +1 more source

Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review

Advanced Science, EarlyView.
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh, Ki‐bum Lee, Junghyeon Lee, Seunghee Cho, Malkeshkumar Patel, Hangfei Li, Yu Wen, Ye Zhou, Joondong Kim   +8 more
wiley   +1 more source

Ferroelectric Hafnium Oxide for In-Memory Computing: Advancing Devices, Circuit Architectures, and System-Level Integration. [PDF]

Micromachines (Basel)
He C, Li W, Li J, Li Q, Xie Z, Du T.
europepmc   +1 more source

Reliability of MOS transistors for embedded non-volatile memories technologies

, 2015
Ce travail de thèse traite des différents phénomènes de dégradation que peuvent subir les transistors MOS suivant leurs applications sur les technologies CMOS avec mémoires non-volatiles embarquées.
Carmona, Marion
core