Results 201 to 210 of about 18,384 (300)
Quantum-enhanced reconfigurable in-memory stochastic computing. [PDF]
Yang HZ +7 more
europepmc +1 more source
Temperature‐graded ALD of HfZrOx (HZO) enables strain‐enhanced stabilization of the ferroelectric o‐phase, achieving simultaneously high polarization, fast switching, and robust endurance in BEOL‐compatible FeCAPs. ABSTRACT Ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors hold great promise for next‐generation nonvolatile memory and logic applications ...
Sheng‐Yen Zheng +5 more
wiley +1 more source
The Influence of the Ar/N<sub>2</sub> Ratio During Reactive Magnetron Sputtering of TiN Electrodes on the Resistive Switching Behavior of MIM Devices. [PDF]
Jeżak P +3 more
europepmc +1 more source
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li +4 more
wiley +1 more source
Ambipolar ohmic contact to silicon for high-performance brain-inspired image sensors. [PDF]
Sun H +8 more
europepmc +1 more source
Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol +7 more
wiley +1 more source
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source
The cerebellum acts as the analog to the medial temporal lobe for sensorimotor memory. [PDF]
Hadjiosif AM, Gibo TL, Smith MA.
europepmc +1 more source
A CMOS‐compatible ferroelectric transistor harnesses the interplay between stable gate polarization memory and volatile non‐quasi‐static channel charge dynamics to emulate how biological synapses regulate their own plasticity. This brain‐inspired dual‐memory mechanism, realized in a single device, enables a physical reservoir computer that solves ...
Yifan Wang +8 more
wiley +1 more source

