Intermittent-Aware Design Exploration of Systolic Array Using Various Non-Volatile Memory: A Comparative Study. [PDF]
Taheri N, Tabrizchi S, Roohi A.
europepmc +1 more source
This review elucidates URB design strategies, including genetic and physicochemical modifications, while dissecting the synergistic mechanisms governing spatiotemporal control. It further evaluates applications in targeted drug delivery, gene modulation, and immunotherapy, finally offering perspectives on overcoming translational barriers for clinical ...
Xueyao Wang +5 more
wiley +1 more source
Development of a novel self-healing Zn(II)-metallohydrogel with wide bandgap semiconducting properties for non-volatile memory device application. [PDF]
Roy A +5 more
europepmc +1 more source
Phase change thin films for non-volatile memory applications. [PDF]
Lotnyk A, Behrens M, Rauschenbach B.
europepmc +1 more source
Gate Enhancing Charge‐Spin Conversion in Organic Chiral Field Effect Transistors
Room‐temperature organic chiral multiferroic field effect transistors are demonstrated, enabling bidirectional control between spin and charge. Specifically, spin polarization affects the ferroelectric polarization, and ferroelectric polarization, in turn, can modulate spin polarization and spin‐dependent transport.
Shilin Li +4 more
wiley +1 more source
CuInS2 quantum dots-based unipolar resistive switching for non-volatile memory applications. [PDF]
Sharma H +5 more
europepmc +1 more source
Emerging non volatile memories reliability
Questa tesi presenta i risultati dell’attività di ricerca svolta durante il ciclo XXIX di dottorato in Scienze dell’Ingegneria presso l’Università degli Studi di Ferrara. In particolare la tesi tratta la caratterizzazione elettrica, la analisi statistica ed il modeling dei meccanismi fisici e dell’affidabilità di memorie non volatili innovative. Nel
openaire +1 more source
On the Ordering Mechanism of Cu+ in 2D van der Waals Multiferroic CuCrP2S6
Temperature‐dependent X‐ray single‐crystal diffuse scattering measurements of CuCrP2S6 in the (H, K, 0) plane reveal the gradual emergence and strengthening of short‐range order upon cooling from 230 to 170 K. At intermediate temperatures, diffuse features become pronounced and eventually lock into sharp incommensurate satellite reflections, indicating
Jiasen Guo +5 more
wiley +1 more source
Multi‐Physical Field Modulated P‐Bit Device Based on VO2 Thin Film
We have proposed a VO2‐based P‐bit device where synergistic multi‐physical field modulation enables real‐time tunability of randomness. Besides introducing a new phase‐change material‐based device approach for high‐performance P‐bits, this study also demonstrates a synergistic multi‐physical field modulation strategy that opens new opportunities for ...
Bowen Sun +10 more
wiley +1 more source
Information can be stored in the human skin memristor which has non-volatile memory. [PDF]
Pabst O, Martinsen ØG, Chua L.
europepmc +1 more source

