Results 101 to 110 of about 484,592 (357)
Lanthanide‐Doped Ga2O3: A Route to Bandgap Engineering for Ultraviolet Detection
Substitutional doping with lanthanide elements under charge balance conditions can effectively tune the bandgap of gallium oxide and has the potential to achieve a low background current in ultraviolet detection. Abstract The demand for next‐generation wide bandgap semiconductors is driven by applications such as solar‐blind ultraviolet detection and ...
Shunze Huang+6 more
wiley +1 more source
Quantification at a distance and grammatical illusions in French
Abstract Recent research in psycholinguistics supports the hypothesis that retrieval from working memory is a key component of establishing syntactic dependencies in comprehension. This can result in so‐called grammatical illusions. These illusions have been modeled as the result of a content‐addressable retrieval process in sentence comprehension that
Jérémy Pasquereau+2 more
wiley +1 more source
In this article we investigate a problem with nonlocal boundary conditions which are multipoint perturbations of mixed boundary conditions in the unit square $G$ using the Fourier method. The properties of a generalized transformation operator $R: L_2(G)
Ya.O. Baranetskij+3 more
doaj +1 more source
In this paper, we study the existence of positive solutions to the nonlinear fractional order singular and semipositone nonlocal boundary value problem D 0+u(t) + f(t, u(t)) = 0, 0 < t < 1, u(0) = u′(0) = · · · = u(n−2)(0) = 0, u(1) = μ ...
Xinan Hao, Lishan Liu, Yonghong Wu
semanticscholar +1 more source
Local and nonlocal boundary conditions for μ-transmission and fractional elliptic pseudodifferential operators [PDF]
A classical pseudodifferential operator $P$ on $R^n$ satisfies the $\mu$-transmission condition relative to a smooth open subset $\Omega $, when the symbol terms have a certain twisted parity on the normal to $\partial\Omega $.
G. Grubb
semanticscholar +1 more source
On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices
A scalable method for directly growing WS2 enables robust and persistent p‐type behavior in back‐gated FETs, independent of metal contacts, thickness, or ambient conditions. Electrical measurements reveal minimal Schottky barrier heights and stable thermionic transport, while first‐principles simulations suggest tungsten vacancies or WO3 species as the
Carlos Marquez+14 more
wiley +1 more source
In this paper, we investigate the eigenvalue properties of a nonlocal Sturm–Liouville equation involving fractional integrals and fractional derivatives under different boundary conditions.
Yunyang Zhang, Shaojie Chen, Jing Li
doaj +1 more source
Second order systems with nonlinear nonlocal boundary conditions
This paper is concerned with the second order differential equation with not necessarily linear nonlocal boundary condition. The existence of solutions is obtained using the properties of the Leray–Schauder degree. The results generalize and improve some
Jean Mawhin+2 more
doaj +1 more source
Achieving Ultra‐Low Contact Resistance via Copper‐Intercalated Bilayer MoS2
A MoS2‐based transistor, featuring bilayer MoS2 connected to Cu‐intercalated bilayer MoS2 electrodes is designed. At a supply voltage of 0.6 V, the contact resistance is 16.7 Ω µm (zigzag) and 30.0 Ω µm (armchair), approaching or even surpassing the 30 Ω µm quantum limit for single‐layer materials.
Huan Wang+4 more
wiley +1 more source
1 Transistor‐Dynamic Random Access Memory as Synaptic Element for Online Learning
This work demonstrates the feasibility of utilizing capacitor‐less 1 transistor(1 T)‐dynamic random access memory as synaptic element with multilevel capability, large dynamic range of conductance, high linearity, ultralow energy consumption, high endurance exceeding 1015 cycles, and large integration density for artificial‐intelligence‐of‐things edge ...
MD Yasir Bashir+2 more
wiley +1 more source