Results 161 to 170 of about 79,232 (299)

Cortical bone mechanics technology signal quality maintains robustness across a range of biometric profiles. [PDF]

open access: yesJBMR Plus
Dick A   +10 more
europepmc   +1 more source

Fabrication of Planar Highly Enriched Silicon by 28Si Focused Ion Beam and Subsequent Experimental Optimization

open access: yesAdvanced Electronic Materials, EarlyView.
The optimization of silicon enrichment via 28Si focused ion beam, demonstrating the variations in enrichment level with respect to ion beam energy, ionization state, and ion beam density. This has led to adjustments in Monte Carlo simulations (TRYDIN) to account for the difference in observed surface accumulation and recession, with a balance being ...
Maddison Coke   +6 more
wiley   +1 more source

Neuromorphic Computing with Memcapacitors: Advancements, Challenges, and Future Directions

open access: yesAdvanced Electronic Materials, EarlyView.
Neuromorphic computing reduces energy costs by integrating memory and processing in event‐driven architectures, achieving energy usage as low as 10–30 pJ per operation for memcapacitor‐based synapses. Memcapacitors are reviewed as strong contenders for neuromorphic computing, enhancing AI acceleration through charge‐based computations, high resistance,
Nada AbuHamra   +4 more
wiley   +1 more source

Process Integration of U‐Shape Ambipolar Schottky–Barrier Field‐Effect Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
We demonstrate a U‐shape ambipolar Schottky barrier field‐effect transistor fabricated on silicon‐on‐insulator substrate. The geometry naturally enables gate‐all‐around operation and long channel lengths within a compact footprint, while simplifying self‐aligned contact formation compared to conventional 3D architectures. The current device is realized
Cigdem Cakirlar   +9 more
wiley   +1 more source

High‐Performance Monolayer 1T‐GeO2 Transistors with Low‐Resistance Metal Contacts

open access: yesAdvanced Electronic Materials, EarlyView.
First‐principles quantum transport simulations reveal that monolayer 1T‐GeO2 forms ideal Ohmic contacts with conventional metals due to suppressed Fermi‐level pinning. The devices exhibit high on‐state currents of 1151–3237 nA nm−1 and ultralow contact resistance of 35.33–54.03 Ω·µm, outperforming state‐of‐the‐art 2D and oxide semiconductors in ...
Shuai Lang   +6 more
wiley   +1 more source

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