Results 181 to 190 of about 86,968 (310)

A novel hybrid model integrating CEEMDAN decomposition, dispersion entropy and LSTM for photovoltaic power forecasting and anomaly detection. [PDF]

Sci Rep
Qiu Z, Ye J, Lu J, Zhu N.
europepmc   +1 more source

Flexible Thermoelectrics for Wearable Electronics: Trends and Benchmarks in Solid‐State and Ionic Materials, Textile Architectures, Interface Engineering, and Device Performance

Advanced Electronic Materials, EarlyView.
Thermoelectric generators (TEGs) convert waste heat into electricity for self‐powered and wearable electronics. This review highlights advances in flexible, hybrid, and ionic thermoelectric materials, emphasizing ionic thermopower control, textile integration, and hybrid TEG–supercapacitor systems for combined harvesting, sensing, and storage.
Kaliyannan Manojkumar, Moparthi Haritha, Arunmetha Sundaramoorthy, Xiaowen Ruan, Sai Kishore Ravi, Venkateswaran Vivekananthan   +5 more
wiley   +1 more source

Restricted normal modal logics and levelled possible worlds semantics [PDF]

, 2012
Juan C. Agudelo-Agudelo, Manuel Sierra
openalex   +1 more source

Feature fusion based transformer for sentiment analysis in social networks. [PDF]

PLoS One
Li S, Li H, Du J, Yan S, Dong C.
europepmc   +1 more source

The Evolution of Gas Sensors Into Neuromorphic Systems

Advanced Electronic Materials, EarlyView.
Gas sensors are vital for various applications, but conventional designs rely on separate sensing, memory, and processing units, limiting speed, power efficiency, and adaptability. Neuromorphic gas sensing overcomes these constraints by integrating all functions in a single device.
Kevin Dominguez, Dhananjay D. Kumbhar, Abdul Momin Syed, Regina C. Martin, Nazek El‐Atab   +4 more
wiley   +1 more source

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2‐Based Memristors

Advanced Electronic Materials, EarlyView.
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu, Hao Shen, Richard Schroedter, Chong Peng, Hampus Hoffman, Stefan Slesazeck, Ronald Tetzlaff, Thomas Mikolajick, Benjamin Max   +8 more
wiley   +1 more source

Synaptic Plasticity Engineering for Neural Precision, Temporal Learning, and Scalable Neuromorphic Systems. [PDF]

Nanomicro Lett
Liu Z, Fang Y, Liu Q, Tian B, Zhao C.
europepmc   +1 more source

Normal Proofs and Tableaux for the Font-Rius Tetravalent Modal Logic

Marcelo E. Coniglio, Martín Figallo
openalex   +2 more sources

IoTMindCare: An Integrative Reference Architecture for Safe and Personalized IoT-Based Depression Management. [PDF]

Sensors (Basel)
Zamani S, Sinha R, Madanian S, Nguyen M.
europepmc   +1 more source

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers

Advanced Electronic Materials, EarlyView.
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source