Results 211 to 220 of about 2,728,162 (325)

ErMn6Sn6: A Promising Kagome Antiferromagnetic Candidate for Room‐Temperature Nernst Effect‐Based Thermoelectrics

open access: yesAdvanced Functional Materials, EarlyView.
This work investigates the Nernst effect in the Kagome magnet ErMn6Sn6 which exhibits both topological and anomalous Nernst effects with the anomalous Nernst coefficient reaching 1.71 µV K⁻¹ at 300 K. This value surpasses that of most canted antiferromagnetic materials, making ErMn6Sn6 a promising candidate for advancing thermoelectric devices based on
Olajumoke Oluwatobiloba Emmanuel   +2 more
wiley   +1 more source

Raman spectroscopic characterization of crater walls formed upon single-shot high-energy femtosecond laser irradiation of dimethacrylate polymer doped with plasmonic gold nanorods. [PDF]

open access: yesSci Rep
Rigó I   +15 more
europepmc   +1 more source

Al₂O₃‐Functionalized Carbon Nanomembranes with Enhanced Water Permeance and Selectivity for Efficient Air Dehumidification

open access: yesAdvanced Functional Materials, EarlyView.
Carbon nanomembranes with ultra‐thin Al2O3 functionalization are less than 15 nm thin and exhibit outstanding permeation performance with a water vapor/nitrogen selectivity higher than 1 × 104, twice that of pristine CNMs, and an exceptionally high water vapor permeation rate for potential applications in air dehumidification.
Jan Biedinger   +10 more
wiley   +1 more source

Gamma-radiation insulating performance of AlON-hardened Na2O-Bi2O3-SiO2-BaO-Fe2O3-ZrO2 glasses. [PDF]

open access: yesSci Rep
Alzahrani JS   +5 more
europepmc   +1 more source

Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers

open access: yesAdvanced Functional Materials, EarlyView.
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo   +16 more
wiley   +1 more source

Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao   +17 more
wiley   +1 more source

Quantitative gamma-ray imaging with coded aperture method. [PDF]

open access: yesSci Rep
Liang X   +14 more
europepmc   +1 more source

Selective Reduction Laser Sintering: A New Strategy for NO2 Gas Detection Based on In2O3 Nanoparticles

open access: yesAdvanced Functional Materials, EarlyView.
This research utilizes selective reduction laser sintering (SRLS) to engineer In2O3 NPs for flexible NO2 sensors. The introduction of oxygen vacancy defects enhances sensor performance, offering excellent responsiveness, rapid response/recovery, superior selectivity, low detection limit, and long‐term stability.
Shaogang Wang   +8 more
wiley   +1 more source

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