Results 211 to 220 of about 670,324 (322)
Developing a dynamic combined power quality index for assessing the performance of a nuclear facility. [PDF]
Elsotohy AM+4 more
europepmc +1 more source
A metastable high‐vacancy concentration layered P3‐type Na0.5Cr0.5Ti0.5O2 negative electrode material has been synthesized from its K analogues P3‐type K0.5Cr0.5Ti0.5O2 using a facile room temperature ion‐exchange method. The P3‐type Na0.5Cr0.5Ti0.5O2 demonstrates a gravimetric capacity of 125 mA h g−1 and high‐rate performance (80% charging in 3 min ...
Alok K. Pandey+6 more
wiley +1 more source
DNA-Inspired Lightweight Cryptographic Algorithm for Secure and Efficient Image Encryption. [PDF]
Abdelaal MA+5 more
europepmc +1 more source
This study demonstrates that in sputter‐deposited Tb3Fe5O12 (TbIG)/nonmagnetic metal (NM) heterostructures, the interfacial Dzyaloshinskii–Moriya Interaction (DMI) originates at the TbIG/NM interface. Furthermore, measurements suggest a significant interfacial DMI arising from a second non‐local interface, created by inserting a Cu spacer layer between
Stefano Fedel+6 more
wiley +1 more source
Temperature and time dependence on extraction of Molybdenum-99 hot atoms from neutron-irradiated β-molybdenum trioxide particles into water. [PDF]
Yang Y+9 more
europepmc +1 more source
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo+16 more
wiley +1 more source
Achieving 5% <sup>13</sup>C nuclear spin hyperpolarization in high-purity diamond at room temperature and low magnetic field. [PDF]
Kavtanyuk VV, Lee C, Jeong K, Shim JH.
europepmc +1 more source
A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao+17 more
wiley +1 more source