Results 211 to 220 of about 670,324 (322)

Designing Metastable P3‐type Layered Negative Electrodes with High Na Vacancy Concentration for High‐Power Sodium‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A metastable high‐vacancy concentration layered P3‐type Na0.5Cr0.5Ti0.5O2 negative electrode material has been synthesized from its K analogues P3‐type K0.5Cr0.5Ti0.5O2 using a facile room temperature ion‐exchange method. The P3‐type Na0.5Cr0.5Ti0.5O2 demonstrates a gravimetric capacity of 125 mA h g−1 and high‐rate performance (80% charging in 3 min ...
Alok K. Pandey   +6 more
wiley   +1 more source

DNA-Inspired Lightweight Cryptographic Algorithm for Secure and Efficient Image Encryption. [PDF]

open access: yesSensors (Basel)
Abdelaal MA   +5 more
europepmc   +1 more source

Evidence of Long‐Range Dzyaloshinskii–Moriya Interaction at Ferrimagnetic Insulator/Nonmagnetic Metal Interfaces

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrates that in sputter‐deposited Tb3Fe5O12 (TbIG)/nonmagnetic metal (NM) heterostructures, the interfacial Dzyaloshinskii–Moriya Interaction (DMI) originates at the TbIG/NM interface. Furthermore, measurements suggest a significant interfacial DMI arising from a second non‐local interface, created by inserting a Cu spacer layer between
Stefano Fedel   +6 more
wiley   +1 more source

Temperature and time dependence on extraction of Molybdenum-99 hot atoms from neutron-irradiated β-molybdenum trioxide particles into water. [PDF]

open access: yesRSC Adv
Yang Y   +9 more
europepmc   +1 more source

Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers

open access: yesAdvanced Functional Materials, EarlyView.
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo   +16 more
wiley   +1 more source

Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao   +17 more
wiley   +1 more source

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