Results 251 to 260 of about 7,801,010 (369)

Designing Metastable P3‐type Layered Negative Electrodes with High Na Vacancy Concentration for High‐Power Sodium‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A metastable high‐vacancy concentration layered P3‐type Na0.5Cr0.5Ti0.5O2 negative electrode material has been synthesized from its K analogues P3‐type K0.5Cr0.5Ti0.5O2 using a facile room temperature ion‐exchange method. The P3‐type Na0.5Cr0.5Ti0.5O2 demonstrates a gravimetric capacity of 125 mA h g−1 and high‐rate performance (80% charging in 3 min ...
Alok K. Pandey   +6 more
wiley   +1 more source

Electroplating of Wear‐ and Corrosion‐Resistant CrCoNi Medium‐Entropy Alloys beyond Hard Chromium Coatings

open access: yesAdvanced Functional Materials, EarlyView.
The electroplating of a CrCoNi medium‐entropy alloy is achieved using a mixture of an ionic liquid and an aqueous solution containing metal salts. The CrCoNi medium‐entropy alloy thin film exhibits high wear and corrosion resistance superior to conventional hard chromium coatings. Abstract High‐entropy alloys (HEAs) and medium‐entropy alloys (MEAs) are
Yuki Murakami   +7 more
wiley   +1 more source

Thyroid ultrasound findings in young and middle-aged adults living in the region of the Chornobyl Nuclear Power Plant. [PDF]

open access: yesRadiat Environ Biophys
Zabirova A   +5 more
europepmc   +1 more source

Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers

open access: yesAdvanced Functional Materials, EarlyView.
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo   +16 more
wiley   +1 more source

Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao   +17 more
wiley   +1 more source

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