Results 271 to 280 of about 1,246,840 (403)

Evidence of Long‐Range Dzyaloshinskii–Moriya Interaction at Ferrimagnetic Insulator/Nonmagnetic Metal Interfaces

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrates that in sputter‐deposited Tb3Fe5O12 (TbIG)/nonmagnetic metal (NM) heterostructures, the interfacial Dzyaloshinskii–Moriya Interaction (DMI) originates at the TbIG/NM interface. Furthermore, measurements suggest a significant interfacial DMI arising from a second non‐local interface, created by inserting a Cu spacer layer between
Stefano Fedel   +6 more
wiley   +1 more source

Worry about Radiation and Its Risk Factors Five to Ten Years after the Fukushima Nuclear Power Plant Disaster. [PDF]

open access: yesInt J Environ Res Public Health, 2022
Fukasawa M   +8 more
europepmc   +1 more source

Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers

open access: yesAdvanced Functional Materials, EarlyView.
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo   +16 more
wiley   +1 more source

Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao   +17 more
wiley   +1 more source

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