Results 201 to 210 of about 14,767 (290)

Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors

Advanced Electronic Materials, EarlyView.
The present study demonstrates how simple circuits with only two memristive devices are utilized to perform high complexity temporal information processing tasks, like neural spike detection in noisy environment, or time‐series prediction. This circuit simplicity is enabled by the dynamical complexity of the memristive devices, i.e.
Dániel Molnár, Tímea Nóra Török, János Volk, Roland Kövecs, László Pósa, Péter Balázs, György Molnár, Nadia Jimenez Olalla, Zoltán Balogh, János Volk, Juerg Leuthold, Miklós Csontos, András Halbritter   +12 more
wiley   +1 more source

Development and implementation of a model predictive control system for a solar parabolic trough plant influenced by an advanced meteorological disturbance model. [PDF]

Sci Rep
Kalanithi K, Samuel GG, Malathi M, R Venkatesan.   +3 more
europepmc   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
wiley   +1 more source

The application of WUTP-CNN-GRU model in power prediction of desert and floating photovoltaic system. [PDF]

Sci Rep
Jiang J, Su H, Du H, Yin H.
europepmc   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source

Explaining solar forecasts with generative AI: A two-stage framework combining transformers and LLMs. [PDF]

PLoS One
Siddiqa A, Rana N, Khan WZ, Jeribi F, Tahir A.   +4 more
europepmc   +1 more source

Numerical Weather Prediction: Tendencies of Development, Possibilities and Ways of Improvement

Vitalii Shpyg, Oleksandr Shchehlov, Tetiana Sologub, Kateryna Huda, A.Yu. Tsila, Olha Ostrohradska, Olha Ostrohradska   +6 more
openalex   +1 more source

Stretchable Energy Storage with Eutectic Gallium Indium Alloy

Advanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
A highly stretchable liquid metal‐based electrode is developed via a one‐step process, retaining conductivity and capacitance after mechanical deformation up to 900% strain. The stretchable all‐solid‐state device provides a areal energy density of 43 µWh cm⁻2 after 150% strain.
Adit Gupta, Noah Al‐Shamery, Jian Lv, Gurunathan Thangavel, Jinwoo Park, Daniel Mandler, Pooi See Lee   +6 more
wiley   +1 more source

Improving predictions of convective storm wind gusts through statistical post-processing of neural weather models. [PDF]

NPJ Nat Hazards
Leclerc A, Koch E, Feldmann M, Nerini D, Beucler T.   +4 more
europepmc   +1 more source

Aqueous Zinc‐Based Batteries: Active Materials, Device Design, and Future Perspectives

Advanced Energy Materials, EarlyView.
This review conducts a comprehensive analysis of aqueous zinc‐based batteries (AZBs) based on their intrinsic mechanisms, including redox reactions, ion intercalation reactions, alloying reactions, electrochemical double‐layer reactions, and mixed mechanisms, systematically discussing recent advancements in each type of AZBs.
Yan Ran, Fang Dong, Shuhui Sun, Yong Lei
wiley   +1 more source