Results 91 to 100 of about 183 (161)

Magnesium‐Based Transient Bioelectronics, Bio‐Optics and Bio‐Scaffolds

Advanced Functional Materials, EarlyView.
This paper reviews the state of the art and recent advances in magnesium‐based thin‐film, foils, and scaffolds for applications in transient bio‐optics, bioelectronics and tissue engineering. The design principles, fabrication methods, material properties, and integration strategies are discussed in detail.
Massimo Mariello, Yves Leterrier
wiley   +1 more source

Electrostatically‐Stabilized PEG‐Free Lipid Nanoparticles for Systemic Nucleic Acid Delivery

Advanced Functional Materials, EarlyView.
This work describes non‐PEGylated layered lipid nanoparticles (nonPEG LLNPs), a gene delivery platform that improves upon standard PEGylated LNPs via electrostatic adsorption of charged polymers. nonPEG LLNPs maintain colloidal stability under biological stresses, enhance circulation time, and mitigate accelerated blood clearance and hepatic ...
Namita Nabar, Deeksha Kumaresh, Eduardo Nombera Bueno, Mae Pryor, Paula T. Hammond   +4 more
wiley   +1 more source

Stacking Fault Complexions in AgSbTe2 Thermoelectrics With Enhanced Electrical Conductivity

Advanced Functional Materials, EarlyView.
Atomic‐scale characterization resolves stacking fault complexion in AgSbTe2, showing Te and Sb segregation along with lattice dilation. Their enhanced effects on phonon scattering are modeled analytically. Although most defects also impede electron transport, local four‐point‐probe measurements reveal higher electrical conductivity at stacking fault ...
Lamya Abdellaoui, Hanna Bishara, Eleonora Isotta, Cynthia Rodenkirchen, Sergei Grazhdannikov, Yuan Yu, Ruben Bueno‐Villoro, Chanwon Jung, G. Jeffrey Snyder, Baptiste Gault, Yaron Amouyal, Oana Cojocaru‐Mirédin, Christina Scheu, Siyuan Zhang   +13 more
wiley   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

A Material‐Agnostic Strategy for Uniform Patterning of Conjugated Polymers Unveils the True Role of Porosity in Organic Electrochemical Transistors

Advanced Functional Materials, EarlyView.
A generalizable strategy for fabricating regular porous, chemically intact conjugated polymer channels reveals how porosity benefits organic electrochemical transistors. Composition‐dependent performance enhancement is linked to charge carrier mobility, volumetric capacitance, and effective doped volume.
Geon Gug Yang, Camille E. Cunin, Rebecca F. Meacham, Sang Ouk Kim, Aristide Gumyusenge   +4 more
wiley   +1 more source

Validation of the plasma-wall interaction simulation code ERO2.0 by the analysis of tungsten migration in the open divertor region in the Large Helical Device

Validation of the plasma-wall interaction simulation code ERO2.0 by the analysis of tungsten migration in the open divertor region in the Large Helical Device
0000-0003-0655-7347 Tungsten migration in the open divertor region in the Large Helical Device is analyzed for validating the three-dimensional plasma-wall interaction simulation code ERO2.0. The ERO2.0 simulation reproduced the measurement of localized tungsten migration from a tungsten-coated divertor plate installed in the inboard side of the torus.
openaire  

Extraordinary n‐type Tellurium‐Free Thermoelectric Performance of Y‐Doped BiSe via Synergistic Effect of Vacancies and Band Engineering

Advanced Functional Materials, EarlyView.
Yttrium doping in Sb‐alloyed BiSe synergistically induces Bi vacancies and flattens conduction bands, simultaneously slashing lattice thermal conductivity by 50% and boosting the power factor. The optimized n‐type Bi0.64Sb0.3Y0.06Se delivers a peak zT of 0.91 at 393 K (average zT 0.76, 300–523 K) and an 8‐pair module with 4.6% conversion efficiency ...
Wenhao Xie, Fang Lyu, Xiaolong Sun, Chang Li, Xiaolu Zhu, Liangwei Hu, Qianfeng Ding, Wenjie Zhou, Muyang Huang, Yineng Gou, Yi Zhao, Han Tang, Wei Cao, Yue Hou, Yun Zheng, Ady Suwardi, Ziyu Wang   +16 more
wiley   +1 more source

Direct Channel Implantation of B and BF2 Ions for Functional Control of Oxygen Vacancies in Oxide Semiconductor Thin Film Transistors

Advanced Functional Materials, EarlyView.
Direct channel implantation of B and BF2 ions was employed to fabricate amorphous IGZO TFTs with improved electrical and stability properties. B and BF2 implantation modulate oxygen vacancies within the IGZO channel. The field‐effect mobility of ion‐implanted IGZO TFTs was enhanced as compared to pristine IGZO TFTs.
Beom Soo Kim, Jong Bin An, Seok Gyu Hong, Moon Ho Lee, Ju Hyun Lee, Ji Yeong Park, Hwa Seon Kim, I. Sak Lee, Kyungmoon Kwak, Hyun Jae Kim   +9 more
wiley   +1 more source

Systematic analysis of magnetic equilibrium reconstruction with eddy currents on LTX-β

Nuclear Fusion
Magnetic equilibrium reconstruction in the Lithium Tokamak Experiment-Beta (LTX- β ) is complicated by strong eddy currents and toroidal asymmetries arising from its segmented, close-fitting conducting shell.
R. Shousha, C. Hansen, A. Maan, A.O. Nelson, D.P. Boyle, S. Banerjee, R. Majeski   +6 more
doaj   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source