Results 151 to 160 of about 1,694 (263)

Signatures of Edge States in Antiferromagnetic Van der Waals Josephson Junctions

open access: yesAdvanced Materials, EarlyView.
ABSTRACT The combination of superconductivity and magnetic textures leads to unconventional superconducting phenomena, including new correlated and topological phases. Van der Waals (vdW) materials emerge as a versatile platform for exploring the interplay between these two competing orders.
Celia González‐Sánchez   +10 more
wiley   +1 more source

Spaces and sequences in the hippocampus: a homological perspective. [PDF]

open access: yesJ Comput Neurosci
Babichev A, Vashin V, Dabaghian Y.
europepmc   +1 more source

Large‐Area 2D Metasurface‐Based Triboelectric E‐Skin Arrays: Contact & Proximity Tactile Mapping with Broadband Acoustic Readouts

open access: yesAdvanced Materials, EarlyView.
Metasurface‐engineered NC‐TENG arrays integrate tactile pressure mapping, non‐contact gesture sensing, and acoustic signal readouts in one ultrathin module, and outperforms pristine PDMS in terms of electrical output and real‐time spatial mapping for next‐gen wearables.
Injamamul Arief   +12 more
wiley   +1 more source

All‐Optical Reconfigurable Physical Unclonable Function for Sustainable Security

open access: yesAdvanced Materials, EarlyView.
An all‐optical reconfigurable physical unclonable function (PUF) is demonstrated using plasmonic coupling–induced sintering of optically trapped gold nanoparticles, where Brownian motion serves as a robust entropy source. The resulting optical PUF exhibits high encoding density, strong resistance to modeling attacks, and practical authentication ...
Jang‐Kyun Kwak   +4 more
wiley   +1 more source

Correlated Charge Transport in an Organic Coulomb Glass

open access: yesAdvanced Materials, EarlyView.
ABSTRACT Advances in the development of organic field‐effect transistors (OFETs), electrically gated organic semiconductors (EGOFETs), and organic electrochemical transistors (OECTs) allow for the operation of these devices at very high charge‐carrier densities, where Coulomb interactions between carriers can be expected to become significant.
Magdalena Sophie Dörfler   +3 more
wiley   +1 more source

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

open access: yesAdvanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid   +6 more
wiley   +1 more source

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