Results 151 to 160 of about 1,391 (258)

Spaces and sequences in the hippocampus: a homological perspective. [PDF]

J Comput Neurosci
Babichev A, Vashin V, Dabaghian Y.
europepmc   +1 more source

All‐Optical Reconfigurable Physical Unclonable Function for Sustainable Security

Advanced Materials, EarlyView.
An all‐optical reconfigurable physical unclonable function (PUF) is demonstrated using plasmonic coupling–induced sintering of optically trapped gold nanoparticles, where Brownian motion serves as a robust entropy source. The resulting optical PUF exhibits high encoding density, strong resistance to modeling attacks, and practical authentication ...
Jang‐Kyun Kwak, Changgyun Moon, Hyun‐Bin Yu, Sunkook Kim, Dong‐Hwan Kim   +4 more
wiley   +1 more source

Evolution problems with perturbed 1-Laplacian type operators on random walk spaces. [PDF]

Math Ann
Górny W, Mazón JM, Toledo J.
europepmc   +1 more source

Correlated Charge Transport in an Organic Coulomb Glass

Advanced Materials, EarlyView.
ABSTRACT Advances in the development of organic field‐effect transistors (OFETs), electrically gated organic semiconductors (EGOFETs), and organic electrochemical transistors (OECTs) allow for the operation of these devices at very high charge‐carrier densities, where Coulomb interactions between carriers can be expected to become significant.
Magdalena Sophie Dörfler, Heinz Bässler, Harald Oberhofer, Anna Köhler   +3 more
wiley   +1 more source

Second-order asymptotics of fractional Gagliardo seminorms as s → 1 - and convergence of the associated gradient flows. [PDF]

Fract Calc Appl Anal
Kubin A, Pagliari V, Tribuzio A.
europepmc   +1 more source

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

Advanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid, Haiyue Dong, Gillian M. Nolan, SungWoo Nam, Nadya Mason, Pinshane Y. Huang, Arend M. van der Zande   +6 more
wiley   +1 more source

Operator means, barycenters, and fixed point equations. [PDF]

Acta Sci Math
Virosztek D.
europepmc   +1 more source

Activating a Metallization Switch for Record Hydrogen Evolution in Single‐Atom Modified Polar MOF Piezocatalysts

Advanced Materials, EarlyView.
ABSTRACT Piezocatalytic hydrogen evolution enables the conversion of mechanical energy into chemical fuels, but its efficiency is constrained by a trade‐off between piezoelectric polarization and electronic conductivity. Strong piezoelectric polarization is essential for sufficient driving force, yet highly polar materials typically suffer from poor ...
Chongyan Hao, Xinwei Guan, Yang Wu, Lingfeng Zhu, Yiwen Mai, Thomas Frauenheim, Zhenping Fu, Yalin Lu, Shidong Wang, Hanxing Liu, Hua Hao, Shujun Zhang, Zhenxiang Cheng, Xiaoning Li   +13 more
wiley   +1 more source

Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS2 Field Effect Transistors

Advanced Materials, EarlyView.
Enhancement‐mode monolayer MoS2 FETs with low threshold voltage are essential for low‐power electronics. The threshold voltage can be tuned by the gate metal work function when the semiconductor/dielectric interface is clean. Interfaces between monolayer MoS2 and ZrO2 or hBN allow effective work‐function modulation of the threshold voltage, in contrast
Lixin Liu, Han Yan, Leyi Loh, Kamal Kumar Paul, Soumya Sarkar, Deepnarayan Biswas, Tien‐Lin Lee, Takashi Taniguchi, Kenji Watanabe, Manish Chhowalla, Yan Wang   +10 more
wiley   +1 more source

Existence and uniqueness of solutions for fuzzy fractional integro-differential equations with boundary conditions. [PDF]

Sci Rep
K A, V P, Kausar N, Salman MA.
europepmc   +1 more source