Results 171 to 180 of about 4,998,210 (282)

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Gamma-irradiation-induced modification of hopping conductivity in (TlInSe₂)_0.9(TlGaTe₂)_0.1 solid solution. [PDF]

Sci Rep
Sardarly RM, Aliyeva NA, Mammadov IK, Salmanov FT, Mammadov RA, Mammadova GE, Rasulova AA.   +6 more
europepmc   +1 more source

Ferroionic Electrostatic Landscapes Enabling Wireless Energy Harvesting, Storage, and Sensing

Advanced Electronic Materials, EarlyView.
By integrating experiments and electrostatic field simulations, we show that long‐range wireless coupling in Li‐based ferroionics devices emerges from the cooperative interaction between ionic migration and electronic polarization. This coupling sustains self‐polarized electrostatic fields across centimeter‐scale air gaps without external bias or ...
M. Helena Braga, Beatriz M. Gomes, António B. Vale, Beatriz A. Maia, Ilídio B. Costa, Filipa Braz, Jorge C. Ribeiro, João C. Ribeiro   +7 more
wiley   +1 more source

Investigation of the structural, optical, and electrical properties of the (CH₃NH₃)₃(SbCl₅)·Cl compound. [PDF]

RSC Adv
Chakchouk N, Khachroum H, Ben Yazeed MA, Awhida AA, Abdelbaky MSM, Granda SG, Ben Rhaiem A.   +6 more
europepmc   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Localized States' Role in MoS₂ Few-Layer Device: A Study by Schottky Capacitance Spectroscopy and Thermally Stimulated Current. [PDF]

ACS Omega
Gouveia RC, Cichetto L, Ferreira de Almeida L, Teodoro MD, Chiquito AJ.   +4 more
europepmc   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Strong anharmonicity driven wave-like thermal transport and high thermoelectric performance in TlCu₅Se₃. [PDF]

Sci Adv
Choudhury S, Bhui A, Matukumilli PVD, Thapa M, Soni A, Waghmare UV, Biswas K.   +6 more
europepmc   +1 more source

Low‐Field Giant Dielectric Tunability by Polaron‐Mediated Interfacial Polarization in Pulsed‐Laser‐Deposited‐Nanocrystalline/Amorphous Composite BaTiO3 Thin Films

Advanced Electronic Materials, EarlyView.
Comparison of tunability efficiency between vacuum‐deposited PLD‐BTO films grown at Td = 550°C in the present study and representative previous reports. ABSTRACT Electrically tunable dielectric thin films are essential components for next‐generation low‐voltage electronic devices.
Shinya Kondo, Taichi Murakami, Loick Pichon, Joël Leblanc‐Lavoie, Takashi Teranishi, Akira Kishimoto, Tomoaki Yamada, My Ali El Khakani   +7 more
wiley   +1 more source

New hybrid compound (C₆H₁₀N₂)(H₂PO₄)₂: insights into its structural, optical, and electrical behavior for electronic applications. [PDF]

RSC Adv
Ghoudi A, Weslati N, Alsobai NA, Alghamdi NA, Rekik W, Oueslati A.   +5 more
europepmc   +1 more source