Results 241 to 250 of about 380,624 (313)
Low Power Consumption Silica Thermo-Optic Switch Based on Polymer Cladding. [PDF]
Zhong T +6 more
europepmc +1 more source
Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)
Luminescent MOF‐76 materials based on Eu(III) and mixed Eu(III)/Y(III) show rapid and reversible changes in emission intensity in response to O2 with very short response times. The effect is based on triplet quenching of the linker ligands that act as photosensitizers. Average emission lifetimes of a few milliseconds turn out to be mostly unaffected by
Zhenyu Zhao +5 more
wiley +1 more source
Large-scale silicon photonics switches for AI/ML interconnections based on a 300-mm CMOS pilot line. [PDF]
Suzuki K +5 more
europepmc +1 more source
InP-Based Passive Saturable Absorber-Based Switching Gate for High bit-rate All Optical Regeneration
D. Massoubre
openalex +1 more source
Survey of QoS issues for TCP connections in Optical Burst Switched Networks
Terrance FrederickFernandez +1 more
openalex +1 more source
Glyphosate (GLY) and its primary metabolite, aminomethylphosphonic acid (AMPA), are photodegraded using a poly(vinylidene fluoride) membrane with immobilized titanium dioxide (PVDF‐TiO2) in a continuous flow‐through operation under solar light. At optimized conditions, the PVDF‐TiO2 membrane achieved 95% GLY and 80% AMPA removal with •O2− as the ...
Phuong B. Trinh +4 more
wiley +1 more source
Thermal transport in Ru and W thin films is studied using steady‐state thermoreflectance, ultrafast pump–probe spectroscopy, infrared‐visible spectroscopy, and computations. Significant Lorenz number deviations reveal strong phonon contributions, reaching 45% in Ru and 62% in W.
Md. Rafiqul Islam +14 more
wiley +1 more source
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang +6 more
wiley +1 more source

