Results 1 to 10 of about 30,133 (163)

All-optical switching of an epsilon-near-zero plasmon resonance in indium tin oxide

Nature Communications, 2021
All-optical switching is important for integrated-photonics and communication devices. Here the authors demonstrate all-optical switching of an Epsilon-Near-Zero plasmon resonance using indium tin oxide thin film.
Justus Bohn, Ting Shan Luk, Craig Tollerton, Sam W. Hutchings, Igal Brener, Simon Horsley, William L. Barnes, Euan Hendry   +7 more
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A Flexible Circularly Polarized Luminescence Switching Device Based on Proton‐Coupled Electron Transfer

Advanced Science, 2022
Flexible circularly polarized luminescence (CPL) switching devices have been long‐awaited due to their promising potential application in wearable optoelectronic devices.
Guojian Yang, Zhiqiang Yao, Xuefeng Yang, Yigui Xie, Pengfei Duan, Yu‐Mo Zhang, Sean Xiao‐An Zhang   +6 more
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Multi‐Level Electro‐Thermal Switching of Optical Phase‐Change Materials Using Graphene

Advanced Photonics Research, 2021
Reconfigurable photonic systems featuring minimal power consumption are crucial for integrated optical devices in real‐world technology. Current active devices available in foundries, however, use volatile methods to modulate light, requiring a constant ...
Carlos Ríos, Yifei Zhang, Mikhail Y. Shalaginov, Skylar Deckoff-Jones, Haozhe Wang, Sensong An, Hualiang Zhang, Myungkoo Kang, Kathleen A. Richardson, Christopher Roberts, Jeffrey B. Chou, Vladimir Liberman, Steven A. Vitale, Jing Kong, Tian Gu, Juejun Hu   +15 more
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All‐Optical Switching of Structural Color with a Fabry–Pérot Cavity

Advanced Photonics Research, 2023
Fine tuning the optical responses of thin‐film devices is highly attractive for emerging applications, such as optical memories, solar cells, nanophotonics, and photodetectors.
Omar A. M. Abdelraouf, Xin Cai Wang, Choon Hwa Goh Ken, Chee Beng Lim Nelson, Siu Kit Ng, Wei De Wang, Xiao Renshaw Wang, Qi Jie Wang, Hong Liu   +8 more
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Towards High Extinction Ratio in Silicon Thermo-Optic Switches—Unravelling Complexity of Fabrication Variation

IEEE Photonics Journal, 2018
$2\times 2$ Mach–Zehnder thermo-optic switches on silicon are found to exhibit huge difference of extinction ratios between the bar and cross port, with the bar port lower by up to 20 dB.
Rui Zhu, Xin Zhou, Nan Yang, Lemeng Leng, Wei Jiang   +4 more
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Ultrafast Plasmonic Optical Switching Structures and Devices

Frontiers in Physics, 2019
Plasmonic structures possess rich physics related to the sensitivity of plasmon resonance to the change in the environmental dielectric constant, the enhanced light scattering and optical extinction, and the local field enhancement enabled strong light ...
Xinping Zhang, Jinghui Yang, Jinghui Yang   +2 more
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A scheme for simulating multi-level phase change photonics materials

npj Computational Materials, 2021
Chalcogenide phase change materials (PCMs) have been extensively applied in data storage, and they are now being proposed for high resolution displays, holographic displays, reprogrammable photonics, and all-optical neural networks.
Yunzheng Wang, Jing Ning, Li Lu, Michel Bosman, Robert E. Simpson   +4 more
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Study of the Chalcogenide Nonlinear Fiber Bragg Gratings for All-Optical Switching

Communications, 2012
In this paper uniform and apodized nonlinear chalcogenide glass fiber Bragg gratings (FBG) as novel and promising devices for all-optical switching are investigated. The transmission response of these devices is discussed theoretically.
Eliska Jurisova, Jarmila Mullerova
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Nonvolatile Plasmonics Based on Optically Reprogrammable Phase Change Materials

IEEE Photonics Journal, 2022
Here, a new platform for a realization of novel nonvolatile optical switching devices was proposed that takes an advantage of high field confinement provided by plasmonics and multi-state programming capabilities of chalcogenide phase change materials. A
Jacek Gosciniak
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Voltage-assisted all-optical switching in magnetic tunnel junctions based on Tb/Co multilayers [PDF]

APL Materials
This work investigates the influence of bias voltage on the optical switching behavior of a Tb/Co-based Magnetic Tunnel Junction (MTJ) in an 80-nm diameter pillar device.
Quoc Trung Trinh, Jun-Xiao Lin, Boonthum Kunyangyuen, David Salomoni, Stephane Auffret, Gregory Malinowski, Erwine Pargon, Ioan-Lucian Prejbeanu, Michel Hehn, Stephane Mangin, Liliana D. Buda-Prejbeanu, Ricardo C. Sousa   +11 more
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