Results 101 to 110 of about 176,252 (197)

Efficient spin-orbit torque switching in a magnetic insulator via ultrathin Pt and light metal overlayers. [PDF]

Commun Phys
Fedel S, Avci CO.
europepmc   +1 more source

Multifunctional integrated electrochromic device by p-n conductive polymers for self-powered smart windows and miniaturized spectrometers. [PDF]

Nat Commun
Zhang X, Hao L, Xie J, Tan Z, Li S, Gan C, Xiong W, Duan X, Li S, Xu Z, Zhang K, Wang Y, Tang H, Huang F.   +13 more
europepmc   +1 more source

Active multiplexing for scalable generation and manipulation of photonic quantum states. [PDF]

Nano Converg
Kaneda F, Yabuno M.
europepmc   +1 more source

Spin-Orbit Torque-Driven Perpendicular Magnetization Switching for Artificial Synapses in Co/Ho Multilayer Systems. [PDF]

Nanomaterials (Basel)
Li S, Wei Y, Chen Y, Qu K, Yu P, Jiang Y.   +5 more
europepmc   +1 more source

Self-powered photo-pyroelectric sensing in antiferroelectric Hafnium zirconium memory with asymmetric van der Waals electrodes. [PDF]

Nat Commun
Gan X, Zhu L, Han J, Zuo X, Zheng C, Li W, Chu J, An Z.   +7 more
europepmc   +1 more source

Multigated Photochromic Materials: Mechanism, Progress, and Application. [PDF]

Research (Wash D C)
Song Z, Liao J, Hao F, Shen M, Wu J, Yu T.   +5 more
europepmc   +1 more source

Synthesis of Large-Area 2D Prussian Blue as Ion-Transport Channels for Non-Volatile Memristors. [PDF]

Small
Torres-Cavanillas R, Chen H, Castells-Gil J, Hidalgo D, Arenós-Amat M, Allen CS, Fabi G, Gramse G, Coronado E, Bogani L.   +9 more
europepmc   +1 more source

Atomic-Scale Engineering of Ge-Sb-Te Compounds: Ge Vacancies in Bulk GeSb₄Te₇ and Layer Sliding in GeSb₂Te₄ Monolayers. [PDF]

Nanomaterials (Basel)
Meftakhutdinov RM, Sibatov RT, Svetukhin VV.   +2 more
europepmc   +1 more source

All-optical switching of spintronic devices

L'évolution de la mémoire des ordinateurs conduit à plusieurs niveaux des applications, potentielles mariant vitesse, densité de stockage et coût. À mesure que les limites des mémoires CMOS (Complementary Metal Oxide Semiconductor) approchent, l'intérêt pour les alternatives non volatiles telles que la mémoire magnétique à accès aléatoire (MRAM ...
openaire   +1 more source