Results 241 to 250 of about 176,788 (276)

Network Requirements on Optical Switching Devices

Photonics in Switching, 1997
Network requirements on optical switching devices are discussed; in particular, a statistical model of accumulation of interferometric crosstalk is presented, analysed, and illustrated.
Mats Gustavsson, Lars Gillner, Claus Popp Larsen   +2 more
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Overshoot Switching in Bistable Optical Devices

Integrated and Guided Wave Optics, 1980
In this paper we show that it is possible for BOD's to switch at incident light levels considerably smaller than the critical incident signals predicted by steady state theory. This effect may be large when the device has two time constants of roughly equal value.
J.A. Goldstone, E. Garmire, P.-T. Ho
openaire   +1 more source

Crystalline Colloidal Array Optical Switching Devices

1996
Abstract : We have constructed nonlinear crystalline colloidal arrays from self assembling fluorinated colloidal particles which contain dyes. These colloidal arrays were refractive index matched to the medium such that they do not diffract light. We have observed for the first time the theoretically predicted nonlinear diffraction switching when a ...
S. A. Asher, Guisheng Pan
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Switching dynamics of optical bistable devices

Applied Physics B Photophysics and Laser Chemistry, 1988
The switching dynamics of optical bistable devices is studied and some recent results are reviewed.
A. Daunois, J. Y. Bigot
openaire   +1 more source

Optical switching devices based on semiconductor optical amplifiers

2009 International Conference on Photonics in Switching, 2009
For large-scale optical-packet-switching systems, an 3:1 optical switch that monolithically integrates an 8ch-SOA-array, an 6:1 optical coupler, and a Ich-SOA was developed. The device exhibited a large gain and high extinction-ratio together with fast switching-time.
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Low-switching energy optical bistable devices

Annual Meeting Optical Society of America, 1986
We describe two approaches to low-energy switching and optical bistability. In one approach, which is a more fundamental approach, we use the nonlinearity associated with bound excitons in CdS to demonstrate the lowest total switching energy (4 pJ) of any optical device exhibiting two stable output states for the same input intensity.1 Bound excitons ...
Mario Dagenais, W. F. Sharfin
openaire   +1 more source

All-Optical Switching in Optical Fibre Devices

Nonlinear Guided-Wave Phenomena, 1991
A number of fibre based devices have been shown to be capable of performing all-optical switching. These include, polarisation discriminators [1], Mach-Zehnder interferometers [2], Sagnac interferometers [3] and coherent couplers [4]. The crucial feature common to these devices is the existence of two modes which can propagate independently in the ...
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Wafer bonded all-optical switching devices

Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society, 2002
In conclusion wafer-bonding of GaAs on InP is an efficient method to realize vertical cavity all-optical switching devices operating at 1.55 /spl mu/m wavelength. It combines very efficiently the active optoelectronic properties of InP-based materials with the advantageous optical and thermal properties of GaAs-AlAs Bragg reflectors.
J.L. Oudar, R. Raj, F. Jeannes, G. Patriarche, E. Lugagne-Delpon   +4 more
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Adaptive Optical Logic And Switching Devices

SPIE Proceedings, 1988
Tunable Optical Bistability, where a low power control beam is used to adapt the hysteresis response and the switching of optically bistable elements, is shown to occur in various systems with a bichromatic input. Some applications of this are suggested for more complex logic gates and for pattern recognition.
David Kagan, Harry Friedmann
openaire   +1 more source

Optical switching device

2000
A description is given of an optical switching device (1) comprising a transparent substrate (3), a switching film (5) of a hydride compound of a trivalent transition or rare earth metal having a thickness of 300 nm, and a palladium capping layer (7) having a thickness of 30 nm. The capping layer is in contact with hydrogen. An electric current through
Broeder, F.J.A. den, Hanzen, R.M.N., Duine, P.A., Jungblut, R.M., Draijer, C., Roozeboom, F., Sluis, P. van der   +6 more
openaire   +1 more source