Results 201 to 210 of about 314,969 (268)

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

open access: yesAdvanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang   +19 more
wiley   +1 more source

Genome-wide selection inference at short tandem repeats. [PDF]

open access: yesPLoS Genet
Huang B   +6 more
europepmc   +1 more source

Tailoring Microstructure in Copper‐Based Conductive Metal–Organic Frameworks for Enhanced Chemiresistive Sensing and Uptake of Sulfur Dioxide

open access: yesAdvanced Functional Materials, EarlyView.
Precursor‐ and solvent‐mediated synthesis yields four Cu3(HHTP)2 morphologies with distinct physicochemical, sorption, and sensing properties toward SO2. Uptake capacities correlate with BET surface area, while sensing performance scales with particle aspect ratio.
Patrick Damacet   +5 more
wiley   +1 more source

Unraveling the Mg Loss Mechanism and Degradation Kinetics in Thermoelectric n‐Type Mg2Si‐Mg2Sn Solid Solutions

open access: yesAdvanced Functional Materials, EarlyView.
Mg‐based thermoelectrics are among the most promising candidates for power generation applications but their performance is compromised by Mg loss at device operation temperatures due to the higher chemical potential of Mg (μMg${\mu}_{\mathrm{Mg}}$) inside the material compared to the environment.
Aryan Sankhla   +2 more
wiley   +1 more source

Three‐dimensional Antimony Sulfide Based Flat Optics

open access: yesAdvanced Functional Materials, EarlyView.
This work presents the development of a grayscale electron beam lithography (g‐EBL) method for fabricating antimony trisulfide (Sb2S3) nanostructures with customizable 3D profiles. The refractive index of g‐EBL patterned Sb2S3 is determined based on the synergy of genetic algorithm and transfer matrix method.
Wei Wang   +18 more
wiley   +1 more source

‘Oxygen Bound to Magnesium’ as High Voltage Redox Center Causes Sloping of the Potential Profile in Mg‐Doped Layered Oxides for Na‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
Na‐ion batteries ‐ Impact of doping on the oxygen redox: The sloping potential of NaMg0.1Ni0.4Mn0.5O2 above 4.0 V is caused by a new redox center (arising from the ‘O bound to Mg’), having a higher potential but being more irreversible compared to the ‘O bound to Ni’.
Yongchun Li   +12 more
wiley   +1 more source

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