Results 251 to 260 of about 133,833 (295)
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2000
Abstract : The spectral responses of a series of heterojunction diodes of p-type Ge(1-y)C(y) On n-type Si (100) substrates were measured by Fourier transform infrared spectroscopy. Alloy layers 0.5 micrometers thick were grown by molecular beam epitaxy at a substrate temperature of 400 C and were doped p-type with different B concentrations.
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Abstract : The spectral responses of a series of heterojunction diodes of p-type Ge(1-y)C(y) On n-type Si (100) substrates were measured by Fourier transform infrared spectroscopy. Alloy layers 0.5 micrometers thick were grown by molecular beam epitaxy at a substrate temperature of 400 C and were doped p-type with different B concentrations.
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Nanowires for UV–vis–IR Optoelectronic Synaptic Devices
Advanced Functional Materials, 2023Xue Chen, Su-Ting Han, Chi-Ching Kuo
exaly
Advanced Optoelectronic Devices
Optics & Laser Technology, 1999Daniela Dragoman, Mircea Dragoman
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Carbon nanotubes in perovskite-based optoelectronic devices
Matter, 2022Huicong Liu, Haining Chen
exaly