Results 121 to 130 of about 137,362 (191)

Resonant tunnelling optoelectronic circuits [PDF]

, 2012
We introduce and report recent developments on a novel five port optoelectronic voltage controlled oscillato r consisting of a resonant tunneling diode (RTD) optical-waveguide integrated with a laser diode.
Romeira, Bruno, Figueiredo, J. M. L.
core  

Ferroelectric modulated visual devices with spatial and temporal polarization‐sensitivity for information recognition and processing in visibility‐degraded environments

InfoMat, EarlyView.
Conventional imaging systems often struggle to recognize objects accurately in challenging environments such as underwater or foggy scenes. We developed a polarization‐sensitive artificial vision device inspired by the mantis shrimp that uses advanced two‐dimensional materials and a ferroelectric layer to directly sense, process, and retain visual ...
Zhaoying Dang, Yifei Zhao, Feng Guo, Tao Yu, Hengrui Guo, Jialin Li, Qilong Cui, Qing Li, Jianhua Hao   +8 more
wiley   +1 more source

Optoelectronic Neuromorphic System Based on Amorphous Indium–Gallium–Zinc–Oxide Thin‐Film Transistor for Spiking Neural Networks

Advanced Intelligent Systems
Neuromorphic computing for spiking neural networks (SNNs) has attracted tremendous attention for next‐generation computing in various applications.
Yumin Yun, Junhyeong Park, Minsik Kong, Ji‐Ho Lee, Sunyeol Bae, Chanjin Park, Soo‐Yeon Lee   +6 more
doaj   +1 more source

Van der Waals ferroelectric semiconductor tunnel junction with ultra‐low switching voltage

InfoMat, EarlyView.
Ferroelectric tunnel junctions are promising building blocks for energy‐efficient memory and brain‐inspired computing, but their practical use is limited by the relatively high voltages required for operation. Here, we develop an all‐two‐dimensional ferroelectric tunnel junction based on AgBiP2Se6 that enables reliable memory operation below 0.2 V and ...
Fuqin Sun, Ruihuan Duan, Ziqian Xin, Yinxiao Li, Bingyuan Xue, Zihua Tian, Kejie Guan, Fan Liu, Xiaoshuang Gou, Yingyi Wang, Weifan Zhou, Cheng Zhang, Lin Liu, Zhao Wang, Jia Shi, Zheng Liu, Xiaowei Wang, Ting Zhang   +17 more
wiley   +1 more source

Optoelectronic properties of GaAs nanowire photodector

, 2016
A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is ...
Fu, Lan, Prasai, Prakash, Saxena, Dhruv, Jagadish, Chennupati, Karouta, Fouad, Tan, Hark Hoe, Parkinson, Patrick, Gao, Qiang, Mokkapati, Sudha, Tian, Jie, Wang, Hao   +10 more
core   +1 more source

Organic neuromorphic optoelectronic sensing materials, intelligent devices, and bionic systems

InfoMat, EarlyView.
Due to the excellent performance and biocompatibility, organic neuromorphic photoelectric sensing technology is regarded as a highly promising research field. In this review, Liu et al. summarize the recent advances in related materials, devices, and system integration.
Yu‐ang Liu, Guocai Liu, Lang Jiang, Yunqi Liu, Yunlong Guo   +4 more
wiley   +1 more source

Programmable solar‐blind ultraviolet sensors enabling integrated single‐pixel sensing and neuromorphic processing

InfoMat, EarlyView.
A Schottky photodiode based on (Al0.14Ga0.86)2O3 was developed, in which the sensing and processing functions were temporally decoupled through bias voltage modulation. By integrating single‐pixel imaging with a reservoir computing architecture, a comprehensive intelligent vision system was constructed.
Hongbin Wang, Zhuangzhuang Li, Zhongshi Ju, Cheng Zhou, Peng Li, Lizhi Ding, Jiangang Ma, Zhongqiang Wang, Ya Lin, Haiyang Xu, Yichun Liu   +10 more
wiley   +1 more source

2D Halide Perovskites for High‐Performance Resistive Switching Memory and Artificial Synapse Applications

Advanced Science
Metal halide perovskites (MHPs) are considered as promising candidates in the application of nonvolatile high‐density, low‐cost resistive switching (RS) memories and artificial synapses, resulting from their excellent electronic and optoelectronic ...
Bixin Li, Fei Xia, Bin Du, Shiyang Zhang, Lan Xu, Qiong Su, Dingke Zhang, Junliang Yang   +7 more
doaj   +1 more source

Conjugated Polymers Engineered for Flexible/Stretchable Electronics

Journal of Polymer Science, EarlyView.
This review highlights glass transition temperature (Tg) as the central parameter linking molecular structure to device performance in conjugated polymers. By tuning backbone rigidity, side‐chain architecture, and dynamic bonding, Tg governs the balance between π–π stacking–enabled charge transport and mechanical compliance.
Yunchong Yang, Josh Bass, Weijia Yan, Ashwath Anand, Chunka Zhou, Jingjing Qiu   +5 more
wiley   +1 more source

MXene‐Based Flexible Memory and Neuromorphic Devices

Small, EarlyView.
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li, Guanglong Ding, Yongbiao Zhai, Ziyu Lv, Yan Yan, Shuangmei Xue, Kui Zhou, Meng Zhang, Yutong Zhang, Qi‐Jun Sun, Yi Liu, Vellaisamy A. L. Roy, Ye Zhou, Su‐Ting Han   +13 more
wiley   +1 more source