Results 91 to 100 of about 146,031 (367)
Investigation of NiO film by sparking method under a magnetic field and NiO/ZnO heterojunction
Nickel oxide (NiO) film receives attention from the field of optoelectronics due to its wide band gap and high transparency. By using a sparking method, the deposition of the NiO film is facile and unique.
Posak Tippo+5 more
doaj +1 more source
For practical applications of photosynaptic devices in neuromorphic systems, photosynaptic transistors prepared using TiO2 channels and TiO2/Al2O3 deep trap interfaces exhibit high stability and retention.
Jieun Kim, Jung Wook Lim, Jaehee Lee
doaj +1 more source
Structurally Colored Physically Unclonable Functions with Ultra‐Rich and Stable Encoding Capacity
This study reports a design strategy for generating bright‐field resolvable physically unclonable functions with extremely rich encoding capacity coupled with outstanding thermal and chemical stability. The optical response emerges from thickness‐dependent structural color formation in ZnO features, which are fabricated by physical vapor deposition ...
Abidin Esidir+8 more
wiley +1 more source
Beam test results for the upgraded LHCb RICH optoelectronic readout system [PDF]
Starting from 2018, the LHCb detector will be upgraded to operate at higher luminosity and extend its potential for new discoveries. The Ring Imaging Cherenkov (RICH) detectors are one of the key components for particle identification of the LHCb detector and the upgraded specifications will require a redesign of the optoelectronic readout chain.
arxiv +1 more source
Near Unity Absorption in Van der Waals Semiconductors for Ultrathin Optoelectronics [PDF]
We demonstrate near unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (< 15 nm) Van der Waals semiconductor structures by coupling ...
arxiv +1 more source
Introducing a high density of dislocations led to an increase in photoconductivity by more than one order of magnitude in Fe‐doped SrTiO3. Detailed analysis, focusing on the quantum paraelectric state, reveals that increased photoconductivity results from a higher charge carrier generation rate due to new energy states induced by dislocations, possibly
Mehrzad Soleimany+3 more
wiley +1 more source
Finite temperature optoelectronic properties of BAs from first principles [PDF]
The high thermal conductivity of boron arsenide (BAs) makes it a promising material for optoelectronic applications in which thermal management is central. In this work, we study the finite temperature optoelectronic properties of BAs by considering both electron-phonon coupling and thermal expansion.
arxiv +1 more source
Electron, hole, and exciton spectra in a quantum wire crossing the quantum well [PDF]
The electron, hole, and exciton energy spectra are calculated within the effective mass and rectangular potential approximations for a combined semiconductor nanoheterosystem consisting of a cylindrical semiconductor quantum wire crossing the plane ...
Gryschyк, А. М., Maкhanets, О. М.
core
We investigate and compare the performance of a gain-switched picosecond Fabry-Perot laser diode operated at 1.06 µm under both injection- and self-seeded conditions.
Malinowski, A.+3 more
core +1 more source
Reconfigurable Integrated Optoelectronics [PDF]
Integrated optics today is based upon chips of Si and InP. The future of this chip industry is probably contained in the thrust towards optoelectronic integrated circuits (OEICs) and photonic integrated circuits (PICs) manufactured in a high-volume foundry.
openaire +3 more sources