Results 101 to 110 of about 260,261 (363)

Removing Homocoupling Defects in Alkoxy/Alkyl‐PBTTT Enhances Polymer:Fullerene Co‐Crystal Formation and Stability

open access: yesAdvanced Functional Materials, EarlyView.
PBTTT‐OR‐R, a C14‐alkoxy/alkyl‐PBTTT polymer derivative, is of substantial interest for optoelectronics due to its specific fullerene intercalation behavior and enhanced charge‐transfer absorption. Comparing this polymer with (S) and without (O) homocoupling defects reveals that PBTTT‐OR‐R(O) forms stable co‐crystals with PC61BM, while PBTTT‐OR‐R(S ...
Zhen Liu   +14 more
wiley   +1 more source

Applications of Carbon Dots in Optoelectronics

open access: yesNanomaterials, 2021
Carbon dots (CDs) are an attractive class of nanomaterials due to the ease of their synthesis, biocompatibility, and superior optical properties. The electronic structure of CDs and hence their optical transitions can be controlled and tuned over a wide ...
Evgeniia A. Stepanidenko   +3 more
semanticscholar   +1 more source

2D Bi2Se3 van der Waals Epitaxy on Mica for Optoelectronics Applications

open access: yesNanomaterials, 2020
Bi2Se3 possesses a two-dimensional layered rhombohedral crystal structure, where the quintuple layers (QLs) are covalently bonded within the layers but weakly held together by van der Waals forces between the adjacent QLs.
Shifeng Wang   +6 more
doaj   +1 more source

Preparation and promising optoelectronic applications of lead halide perovskite patterned structures: A review

open access: yesCarbon Energy, 2023
Lead halide perovskites have received considerable attention from researchers over the past several years due to their superior optical and optoelectronic properties, because of which they can be a versatile platform for fundamental science research and ...
Shangui Lan   +7 more
doaj   +1 more source

Electron, hole, and exciton spectra in a quantum wire crossing the quantum well [PDF]

open access: yes, 2007
The electron, hole, and exciton energy spectra are calculated within the effective mass and rectangular potential approximations for a combined semiconductor nanoheterosystem consisting of a cylindrical semiconductor quantum wire crossing the plane ...
Gryschyк, А. М., Maкhanets, О. М.
core  

Atomically Flat Dielectric Patterns for Bandgap Engineering and Lateral Junction Formation in MoSe2 Monolayers

open access: yesAdvanced Functional Materials, EarlyView.
This study presents a method to create atomically flat dielectric patterns of SiO2 and AlOx for MoSe2 monolayers, forming lateral heterojunctions with minimal strain. The dielectric pattern modulates excitonic properties, contact potential, and carrier dynamics, demonstrating a tunable approach for enhancing the optoelectronic properties of 2D ...
Philipp Moser   +11 more
wiley   +1 more source

Beam test results for the upgraded LHCb RICH optoelectronic readout system [PDF]

open access: yes, 2016
Starting from 2018, the LHCb detector will be upgraded to operate at higher luminosity and extend its potential for new discoveries. The Ring Imaging Cherenkov (RICH) detectors are one of the key components for particle identification of the LHCb detector and the upgraded specifications will require a redesign of the optoelectronic readout chain.
arxiv   +1 more source

Near Unity Absorption in Van der Waals Semiconductors for Ultrathin Optoelectronics [PDF]

open access: yesNano Letters, 2016, 2016
We demonstrate near unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (< 15 nm) Van der Waals semiconductor structures by coupling ...
arxiv   +1 more source

Investigation of NiO film by sparking method under a magnetic field and NiO/ZnO heterojunction

open access: yesMaterials Research Express, 2020
Nickel oxide (NiO) film receives attention from the field of optoelectronics due to its wide band gap and high transparency. By using a sparking method, the deposition of the NiO film is facile and unique.
Posak Tippo   +5 more
doaj   +1 more source

Characteristics of PEALD–Hafnium Dioxide Films and their Application to Gate Insulator Stacks of Photosynaptic Transistors

open access: yesAdvanced Electronic Materials, 2022
For practical applications of photosynaptic devices in neuromorphic systems, photosynaptic transistors prepared using TiO2 channels and TiO2/Al2O3 deep trap interfaces exhibit high stability and retention.
Jieun Kim, Jung Wook Lim, Jaehee Lee
doaj   +1 more source

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