Results 111 to 120 of about 260,261 (363)

Detailed comparison of injection-seeded and self-seeded performance of a 1060nm gain-switched Fabry-Perot laser diode

open access: yes, 2016
We investigate and compare the performance of a gain-switched picosecond Fabry-Perot laser diode operated at 1.06 µm under both injection- and self-seeded conditions.
Malinowski, A.   +3 more
core   +1 more source

Optical fiber fabrication using novel gas-phase deposition technique [PDF]

open access: yes, 2011
We report a highly versatile chemical-in-crucible preform fabrication technique suitable for gas-phase deposition of doped optical fibers. Aluminosilicate and ytterbium-doped phosphosilicate fibers are presented demonstrating the technique and its ...
Boyland, A.J.   +8 more
core   +1 more source

Medium‐Entropy Engineering of Magnetism in Layered Antiferromagnet CuxNi2(1‐x)CrxP2S6

open access: yesAdvanced Functional Materials, EarlyView.
This study explores the aliovalent substitution strategy with Cu and Cr replacing Ni in Ni₂P₂S₆ compounds to engineer magnetism. By creating CuxNi2(1‐x)CrxP2S6 medium‐entropy alloys, the research reveals the evolution of distinct magnetic phases, including the creation of weak ferromagnetism in intermediate compositions.
Dinesh Upreti   +9 more
wiley   +1 more source

Selective Reduction Laser Sintering: A New Strategy for NO2 Gas Detection Based on In2O3 Nanoparticles

open access: yesAdvanced Functional Materials, EarlyView.
This research utilizes selective reduction laser sintering (SRLS) to engineer In2O3 NPs for flexible NO2 sensors. The introduction of oxygen vacancy defects enhances sensor performance, offering excellent responsiveness, rapid response/recovery, superior selectivity, low detection limit, and long‐term stability.
Shaogang Wang   +8 more
wiley   +1 more source

Optoelectronic mixing with high frequency graphene transistors [PDF]

open access: yesarXiv, 2019
Graphene is ideally suited for optoelectronic applications. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We report optoelectronic mixing up to to 67GHz using a back-gated graphene field effect transistor (GFET). We also present a model to describe the resulting mixed current.
arxiv  

Homogeneously bright, flexible and foldable lighting devices with functionalised graphene electrodes [PDF]

open access: yes, 2016
Alternating current electroluminescent technology allows the fabrication of large area, flat and flexible lights. Presently the maximum size of a continuous panel is limited by the high resistivity of available transparent electrode materials causing a ...
Alonso, Elias Torres   +4 more
core   +4 more sources

A Wireless Wearable Sensor System Based on a Silver Nanowire‐Decorated Silicon Nanomembrane for Precise and Continuous Hazardous Gas Monitoring

open access: yesAdvanced Functional Materials, EarlyView.
Silver nanowire‐decorated silicon nanomembrane (AgNW‐SiNM) wireless wearable gas sensor exhibits a high response of ≈1.83 upon exposure to 10 ppm NH3. A stacked structure of the AgNW‐SiNM gas sensor with a flexible Joule heater improves the recovery rate after gas exposure.
Jongwoon Shin   +8 more
wiley   +1 more source

Highly Crystalline Selenium‐Substituted C‐Shaped Ortho‐Benzodipyrrole‐Based A‐D‐A‐Type Nonfullerene Acceptor Enabling Solution‐Processed Single‐Crystal‐Like Thin Films for Air‐Stable, High‐Mobility N‐Type Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Symmetric selenium‐substituted CB‐2Se forms a highly ordered, kaleidoscope‐like 3D single‐crystal structure with enhanced intermolecular interactions, enabling solution‐processed single‐crystal‐like thin film, which transitions from a kinetically trapped face‐on π–π stacking orientation to a thermodynamically stable edge‐on configuration upon thermal ...
Kuo‐Hsiu Huang   +16 more
wiley   +1 more source

Multiplex Chaos Synchronization in Semiconductor Lasers with Multiple Optoelectronic Feedbacks [PDF]

open access: yesarXiv, 2009
Secure chaos based multiplex communication system scheme is proposed utilizing globally coupled semiconductor lasers with multiple variable time delay optoelectronic feedbacks.
arxiv  

Characterization of 40-Gbit/s pulses generated using a lithium niobate modulator at 1550 nm using frequency resolved optical gating [PDF]

open access: yes, 2004
The characteristics of 40-Gbit/s pulses generated by exploiting the nonlinear characteristics of a Mach-Zender Lithium Niobate modulator are presented. A high spectral resolution frequency resolved optical gating apparatus has been developed to allow for
Barry, Liam P.   +4 more
core   +1 more source

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