Results 11 to 20 of about 146,031 (367)
Nanophotonics, 2020 Transition metal dichalcogenide (TMD) semiconductor heterostructures are actively explored as a new platform for quantum optoelectronic systems. Most state of the art devices make use of insulating hexagonal boron nitride (hBN) that acts as a wide ...
Sushko Andrey +11 more
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Interfacial charge and energy transfer in van der Waals heterojunctions
InfoMat, 2022 Van der Waals heterojunctions are fast‐emerging quantum structures fabricated by the controlled stacking of two‐dimensional (2D) materials. Owing to the atomically thin thickness, their carrier properties are not only determined by the host material ...
Zehua Hu +9 more
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Optoelectronic Reservoir Computing [PDF]
Scientific Reports, 2012 Reservoir computing is a recently introduced, highly efficient bio-inspired approach for processing time dependent data. The basic scheme of reservoir computing consists of a non linear recurrent dynamical system coupled to a single input layer and a single output layer. Within these constraints many implementations are possible. Here we report an opto-
Paquot, Yvan +6 more
openaire +8 more sources
Frontiers in Chemistry, 2022 Data-driven methods are receiving increasing attention to accelerate materials design and discovery for organic light-emitting diodes (OLEDs). Machine learning (ML) has enabled high-throughput screening of materials properties to suggest new candidates ...
Hadi Abroshan +6 more
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Structural and Optoelectronic Behaviour of Copper Doped Cs2AgInCl6 Double Perovskite: A DFT Investigation [PDF]
Phys. Rev. B 103, 024102 (2021), 2020 Recently, direct bandgap double perovskites are becoming more popular among photovoltaic research community owing to their potential to address issues of lead (Pb) toxicity and structural instability inherent in lead halide (simple) perovskites. In this study, In-Ag based direct bandgap double perovskite, Cs2AgInCl6 (CAIC), is treated with transition ...
arxiv +1 more source
Coherently strained and dislocation‐free architectured AlGaN/GaN submicron‐sized structures
Nano Select, 2022 To improve the performance and efficiency of Al containing III‐Nitride‐based devices, a number of issues must be addressed, especially the presence and generation of dislocations and other structural defects.
Maryam Khalilian +10 more
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A system to test 2D optoelectronic devices in high vacuum [PDF]
J. Phys. Mater. 3 036001 (2020), 2020 The exploration of electronic and optoelectronic properties of two-dimensional (2D) materials has become one of the most attractive line of research since the isolation of graphene. Such 'all-surface materials' present a strong sensitivity to environmental conditions and thus characterization of the devices based on these materials usually requires ...
arxiv +1 more source
The speed limit of optoelectronics
Nature Communications, 2022 AbstractLight-field driven charge motion links semiconductor technology to electric fields with attosecond temporal control. Motivated by ultimate-speed electron-based signal processing, strong-field excitation has been identified viable for the ultrafast manipulation of a solid’s electronic properties but found to evoke perplexing post-excitation ...
M. Ossiander +17 more
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Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra
Opto-Electronic Advances, 2018 We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains.
Fang Cizhe +7 more
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Heteroepitaxial growth of ZnO branches selectively on TiO2 nanorod tips with improved light harvesting performance [PDF]
, 2011 A seeded heteroepitaxial growth of ZnO nanorods selectively on TiO2 nanorod tips was achieved by restricting crystal growth on highly hydrophobic TiO2 nanorod film surfaces.
Gai, Lili +4 more
core +1 more source