Results 31 to 40 of about 156,761 (319)

Characteristics of PEALD–Hafnium Dioxide Films and their Application to Gate Insulator Stacks of Photosynaptic Transistors

Advanced Electronic Materials, 2022
For practical applications of photosynaptic devices in neuromorphic systems, photosynaptic transistors prepared using TiO2 channels and TiO2/Al2O3 deep trap interfaces exhibit high stability and retention.
Jieun Kim, Jung Wook Lim, Jaehee Lee
doaj   +1 more source

Hot-injection synthesis of lead-free pseudo-alkali metal-based perovskite (TlSnX3) nanoparticles with tunable optical properties

Frontiers in Materials, 2023
The commercialization of organo-inorganic hybrid perovskite materials for optoelectronic applications is limited owing to the restriction of lead (Pb) usage in consumer electronics and the instability of organic cations in the perovskite structure.
Wooyeon Kim, Bonkee Koo, Min Jae Ko, Heesuk Jung   +3 more
doaj   +1 more source

High Load-Induced Birefringence of PMMA Investigated in VIS/NIR Spectral Range [PDF]

, 2019
In the paper, we present the results of an investigation of polymethylmetacrylate’s birefringence induced due to applying high-load. The stress-induced birefringence of the polymethylmetacrylate samples was experimentally investigated by an apparatus ...
Káčik, Daniel, Palček, Peter, Tarjányi, Norbert, Uhričík, Milan   +3 more
core   +2 more sources

Advancements in Optical Communication Research: A Review of India's Progress

IEEE Photonics Journal
With the increasing use of internet and mobile phones, the capacity of the backbone optical communication link has been continually growing across the world and especially in India.
Mandeep Singh, Debanuj Chatterjee, Suchita, Sugeet Sunder, Karamdeep Singh, Mrudula Krishna, Sameer Ahmad Mir, Deepa Venkitesh   +7 more
doaj   +1 more source

Preparation and promising optoelectronic applications of lead halide perovskite patterned structures: A review

Carbon Energy, 2023
Lead halide perovskites have received considerable attention from researchers over the past several years due to their superior optical and optoelectronic properties, because of which they can be a versatile platform for fundamental science research and ...
Shangui Lan, Baojun Pan, Ying Liu, Zhixiang Zhang, Lijie Zhang, Bin Yu, Yanjun Fang, Peijian Wang   +7 more
doaj   +1 more source

Nano-Bismuth-Sulfide for Advanced Optoelectronics

Photonics, 2022
Bi2S3is a semiconductor with rational band gap around near-IR and visible range, and its nanostructures (or nano-Bi2S3) have attracted great attention due to its promising performances in optoelectronic materials and devices.
Zimin Li, Ye Tian
doaj   +1 more source

Size-Dependent Photophysical Behavior of Low Bandgap Semiconducting Polymer Particles

Frontiers in Chemistry, 2019
The photophysics of water and propan-1-ol suspensions of poly [N-9”-heptadecanyl-2,7-carbazole-alt−5,5-(4,7-di-2-thienyl-2′,1′,3′- benzothiadiazole)] (PCDTBT) nanoparticles and mesoparticles has been studied by ultrafast spectroscopy.
Tersilla Virgili, Chiara Botta, Marta M. Mróz, Laurie Parrenin, Cyril Brochon, Eric Cloutet, Eleni Pavlopoulou, Georges Hadziioannou, Mark Geoghegan   +8 more
doaj   +1 more source

A flexible platform for controlled optical and electrical effects in tailored plasmonic break junctions

Nanophotonics, 2020
Mechanically controllable break junctions are one suitable approach to generate atomic point contacts and ultrasmall and controllable gaps between two metal contacts.
Laible Florian, Braun Kai, Hauler Otto, Eberle Martin, Kern Dieter P., Meixner Alfred J., Fleischer Monika   +6 more
doaj   +1 more source

Nanostructured MoS₂ and WS₂ Photoresponses under Gas Stimuli

Nanomaterials, 2022
This study was on the optoelectronic properties of multilayered two-dimensional MoS2 and WS2 materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques.
Mohamed A. Basyooni, Shrouk E. Zaki, Nada Alfryyan, Mohammed Tihtih, Yasin Ramazan Eker, Gamal F. Attia, Mücahit Yılmaz, Şule Ateş, Mohamed Shaban   +8 more
doaj   +1 more source

Characterization of 40-Gbit/s pulses generated using a lithium niobate modulator at 1550 nm using frequency resolved optical gating [PDF]

, 2004
The characteristics of 40-Gbit/s pulses generated by exploiting the nonlinear characteristics of a Mach-Zender Lithium Niobate modulator are presented. A high spectral resolution frequency resolved optical gating apparatus has been developed to allow for
Barry, Liam P., Harvey, John D., Reid, Douglas A., Thomsen, Benn C., Watts, Regan T.   +4 more
core   +1 more source