Results 151 to 160 of about 875,218 (283)

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Real-space spin-orbit interaction from quarter-wave plate nonuniformity. [PDF]

open access: yesNat Commun
Lan W   +7 more
europepmc   +1 more source

Robust Electrocaloric Performance Enabled by Highly‐Polar Frustrated Nanodomains in NaNbO3‐Based Ferrodistortive Relaxor

open access: yesAdvanced Functional Materials, EarlyView.
P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.
Feng Li   +11 more
wiley   +1 more source

New Orbit Propagator to Be Used in Orbital Debris Evolutionary Models

open access: yesNew Orbit Propagator to Be Used in Orbital Debris Evolutionary Models
An orbital environment debris evolutionary model for low Earth orbit has been developed at Kyushu University. A fast orbit propagator is essentially needed in such an evolutionary model because the number of space debris larger than 1 cm in low earth orbit is very large and it takes much time to compute long-term orbital changes of space debris.
openaire   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

A Review of the Current Development State of Non-Terrestrial NB-IoT Systems. [PDF]

open access: yesSensors (Basel)
Beschastnyi V   +4 more
europepmc   +1 more source

Near-Linear Orbit Uncertainty Propagation in Low-Earth Orbit

open access: yesNear-Linear Orbit Uncertainty Propagation in Low-Earth Orbit
第31回アストロダイナミクスシンポジウム (2021年7月26-27日. オンライン開催) The 31th Workshop on JAXA Astrodynamics and Flight Mechanics 2021 (July 26-27, 2021.
openaire   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

open access: yesAdvanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

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