Results 151 to 160 of about 11,539,210 (365)
The Order of Strand Exchanges in Cre-LoxP Recombination and its Basis Suggested by the Crystal Structure of a Cre-LoxP Holliday Junction Complex [PDF]
, 2002 Shelley S. Martin +4 more
openalex +1 more source
Direct Ink Writing of Conductive Hydrogels
Advanced Functional Materials, EarlyView.This review examines the use of direct ink writing (DIW) for fabricating conductive hydrogels with customizable 3D structures. It outlines the rheological requirements for successful DIW, followed by an exploration of the materials and ink formulations used to impart electronic and/or ionic conductivity to hydrogels while maintaining printability ...
Monica Ho +6 more
wiley +1 more source
Accessory factors determine the order of strand exchange in Xer recombination at psi [PDF]
, 2002 Migena Bregu
openalex +1 more source
Advanced Functional Materials, EarlyView.A metastable high‐vacancy concentration layered P3‐type Na0.5Cr0.5Ti0.5O2 negative electrode material has been synthesized from its K analogues P3‐type K0.5Cr0.5Ti0.5O2 using a facile room temperature ion‐exchange method. The P3‐type Na0.5Cr0.5Ti0.5O2 demonstrates a gravimetric capacity of 125 mA h g−1 and high‐rate performance (80% charging in 3 min ...
Alok K. Pandey +6 more
wiley +1 more source
Spin-wave expansion, finite temperature corrections, and order from disorder effects in the double exchange model [PDF]
, 2002 Nic Shannon, Andrey V. Chubukov
openalex +1 more source
Advanced Functional Materials, EarlyView.This study presents a novel approach to designing and fabricating high‐porosity 3D‐printed scaffolds using a customized resin. Scaffold geometry, cellular interactions, and mechanical properties are analyzed to demonstrate these engineered bone models.
Sera Choi +6 more
wiley +1 more source
Staggered dimer order and criticality in an
, 2003 Keigo Hijii, Shaojin Qin, K. Nomura
openalex +1 more source
Advanced Functional Materials, EarlyView.This work investigates the Nernst effect in the Kagome magnet ErMn6Sn6 which exhibits both topological and anomalous Nernst effects with the anomalous Nernst coefficient reaching 1.71 µV K⁻¹ at 300 K. This value surpasses that of most canted antiferromagnetic materials, making ErMn6Sn6 a promising candidate for advancing thermoelectric devices based on
Olajumoke Oluwatobiloba Emmanuel +2 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo +16 more
wiley +1 more source