Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance
This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim +4 more
wiley +1 more source
Organic Field-Effect Transistors Based on Chemical-Plated Pt/Ag Electrodes. [PDF]
Zhao C, Ren X.
europepmc +1 more source
Pinaceae Pine Resins (Black Pine, Shore Pine, Rosin, and Baltic Amber) as Natural Dielectrics for Low Operating Voltage, Hysteresis-Free, Organic Field Effect Transistors. [PDF]
Coppola ME +23 more
europepmc +1 more source
Enhancing Small Molecule Sensing With Aptameric Functionalized Nano Devices
Unveiling an ultra‐sensitive, non‐invasive neurotransmitter sensor. For the first time, a nanoscale sensor for detecting an important neurotransmitter was demonstrated using micro‐electromechanical systems (MEMS) technology. Our approach utilized field‐effect transistor (FET)‐based readout to enable pico‐molar detection of biomarkers in sweat.
Thi Thanh Ha Nguyen +11 more
wiley +1 more source
Effects of Charge Traps on Hysteresis in Organic Field-Effect Transistors and Their Charge Trap Cause Analysis through Causal Inference Techniques. [PDF]
Kim S, Yoo H, Choi J.
europepmc +1 more source
This study shows that a lightweight blackbox neural network provides a practical, cost‐effective solution for bidirectional process prediction in laser‐induced graphene (LIG) fabrication. Achieving high predictive performance with minimal overhead, the approach democratizes machine learning (ML) for resource‐limited environments.
Maxim Polomoshnov +3 more
wiley +1 more source
Recent Progress in Intrinsically Stretchable Sensors Based on Organic Field-Effect Transistors. [PDF]
Zhang M +6 more
europepmc +1 more source
Recent Advances of Self-Healing Electronic Materials Applied in Organic Field-Effect Transistors. [PDF]
Yue H, Wang Z, Zhen Y.
europepmc +1 more source
An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi +7 more
wiley +1 more source
Binary Solvent Engineering Modulates the Microstructure of Stretchable Organic Field-Effect Transistors for Highly Sensitive NO<sub>2</sub> Sensing. [PDF]
Jiang X +4 more
europepmc +1 more source

