Results 231 to 240 of about 50,527 (346)

Optimizing Metal‐Perovskite Interfaces: Electronic and Transport Properties of Au‐Bromide Perovskites Contacts

open access: yesAdvanced Electronic Materials, EarlyView.
This study examines metal–perovskite interfaces in 2D (BA)2PbBr4 and (PEA)2PbBr4 using first‐principles and NEGF methods. It compares top‐ and edge‐contact configurations, revealing Schottky barriers in top contacts and ohmic behavior in edge contacts.
Xinbiao Wang   +6 more
wiley   +1 more source

High‐Yield Fabrication of Electrolyte‐Gated Transistors Based on Graphene Acetic Acid

open access: yesAdvanced Electronic Materials, EarlyView.
We fabricated a liquid‐gated transistor based on graphene acetic acid, which is dielectrophoretically deposited, featuring a spatial resolution down to 10 microns. Our method enables a versatile and reproducible fabrication featuring state‐of‐the‐art performance.
Georgian Giani Ilie   +13 more
wiley   +1 more source

Biorecognition in Organic Field Effect Transistors Biosensors: The Role of the Density of States of the Organic Semiconductor

open access: green, 2016
Marcello Berto   +13 more
openalex   +2 more sources

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

open access: yesAdvanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim   +4 more
wiley   +1 more source

High Mobility (>200 cm2 V−1 s−1) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity

open access: yesAdvanced Electronic Materials, EarlyView.
We demonstrate a top gate Nb capping TFT architecture that induces controlled oxygen out‐diffusion from the IGZO channel. This mechanism generates shallow donor states and enhances electron delocalization, enabling extended percolation pathways. The resulting thin‐film transistors exhibit high mobility, suppressed leakage currents, and strong optical ...
Hyeonjeong Sun   +10 more
wiley   +1 more source

Vertical organic field effect and electrolyte-gated transistors making use of melanin as channel and high surface area activated carbon gate electrodes

open access: gold, 2016
K. Prajwal   +6 more
openalex   +1 more source

All‐Solution‐Processed Perovskite Light‐Emitting Transistors Enabled by a Fully Organic Architecture

open access: yesAdvanced Electronic Materials, EarlyView.
Fully solution‐processed light‐emitting transistors based on CsPbBr3 perovskite nanocrystals (Pe‐LETs) are demonstrated using an all‐organic platform. By optimizing film formation and device integration, the Pe‐LETs achieve bright green emission with excellent color purity and a peak external quantum efficiency of 4.17 × 10−3 %, marking a step forward ...
Kelment Zahoaliaj   +8 more
wiley   +1 more source

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