Results 161 to 170 of about 10,406 (258)

Hydrogen‐Stabilized Self‐Rectifying Memristor Arrays for Reliable Multilevel Synapses in Transformer‐Based Keyword Spotting

Advanced Science, EarlyView.
A non‐filamentary self‐rectifying HfO2/TiOx resistive random‐access memory integrates H2 annealing with an incremental step pulse with verify algorithm to achieve stable and linear analog conductance modulation. The device enables low‐current 6‐bit multilevel operation while suppressing sneak current in crossbar arrays. Implemented in Transformer‐based
Seonjeong Lee, Seohyeon Ju, Won Joo Lee, Myounggon Kang, Sungjun Kim, Yoon Kim   +5 more
wiley   +1 more source

Selective Tuning of Benzothiadiazole Functionality Enables High Crystallinity and Mobility in Regiorandom <i>n</i>-Type Polymers for Organic Field-Effect Transistors. [PDF]

Macromolecules
Kafourou P, He Q, Hu X, Nugraha MI, Tan WL, Luke J, Ding B, McNeill CR, Anthopoulos TD, Heeney M.   +9 more
europepmc   +1 more source

Bioinspired Ionochromic Neuromorphic Transistors for Robotic Intelligent Perception

Advanced Science, EarlyView.
A bioinspired ionochromic neuromorphic transistor couples synaptic conductance modulation with reversible color change through voltage‐controlled ion doping in P3HT/ion gel, mimicking biological synaptic plasticity, and chameleon‐like color regulation.
Quanxing Yao, Xiaojian Zhu, Runsheng Gao, Qian Jiang, Cui Sun, Yi Du, Xuerong Liu, Lixun Wang, Haolong Li, Yuejun Zhang, Run‐Wei Li   +10 more
wiley   +1 more source

Influence of the Chemical Structure of Perylene Derivatives on the Performance of Honey-Gated Organic Field-Effect Transistors (HGOFETs) and Their Application in UV Light Detection. [PDF]

ACS Appl Electron Mater
Fernandes Dias JD, Vieira DH, Serghiou T, Rivas CJ, Constantino CJL, Jimenez LB, Alves N, Kettle J.   +7 more
europepmc   +1 more source

Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy‐Efficient Physical Reservoir Computing

Advanced Science, EarlyView.
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon, Moonseek Jeong, Su In Hwang, Geun Hyeong Park, Joonyong Kim, Hyojun Choi, Hyeong Seok Choi, Da Hyun Kim, Dong Hee Han, Ju Yong Park, Seungho Baek, Jung Ho Yoon, Dong Hyun Lee, Min Hyuk Park   +13 more
wiley   +1 more source

Natural, small molecule aliphatics (cholesterol and hexadecyl palmitate) as dielectrics for low-voltage organic field effect transistors.

Mater Adv
Irimia CV, Schimanofsky C, Ban B, Yumusak C, Ciganek M, Sedlacek P, Krajcovic J, D'Orsi R, Operamolla A, Petritz A, Matura K, Stadlober B, Kanbur Y, Salinas Y, Brüggemann O, Teichert C, Sariciftci NS, Irimia-Vladu M.   +17 more
europepmc   +1 more source

A Supramolecular Approach to Enhance the Optoelectronic Properties of P3HT-b-PEG Block Copolymer for Organic Field-Effect Transistors. [PDF]

ACS Omega
Kumari P, Hajduk B, Jarka P, Bednarski H, Janeczek H, Łapkowski M, Waśkiewicz S.   +6 more
europepmc   +1 more source

Ferroelectric Catalysts in the Hydrogen Evolution Reaction: A Perspective

Advanced Science, EarlyView.
This perspective summarizes recent advances in ferroelectric (FE) catalysts for the hydrogen evolution reaction (HER). It first introduces HER fundamentals and FE mechanisms, then classifies FE catalysts into single‐phase, single‐atom‐modified, heterostructured, and other engineered types, with representative examples.
Rongxuan Lu, Weizhen Meng, Zhenxiang Cheng, Judy N. Hart, Michael Ferry, Sean Li, Wenxian Li   +6 more
wiley   +1 more source

Diselenophene-Dithioalkylthiophene Based Quinoidal Small Molecules for Ambipolar Organic Field Effect Transistors. [PDF]

Adv Sci (Weinh)
Velusamy A, Chen YY, Lin MH, Afraj SN, Liu JH, Chen MC, Liu CL.   +6 more
europepmc   +1 more source

Selective Polarity Control of Metal Oxide Semiconductors for Complementary Logic Gates

Advanced Science, EarlyView.
A scalable electrochemical doping strategy enables in situ p‐to‐n polarity conversion in tin oxide (SnO) thin films using electrolyte gating. Both the pristine p‐type SnO transistor and the electrochemically converted n‐type SnO2 transistor exhibited noticeable and stable electrical performance.
Dong Hyun Park, Seung Ho Ryu, Min Su Kim, Taek‐Mo Chung, Seong Keun Kim, In‐Hwan Baek, Keun Hyung Lee   +6 more
wiley   +1 more source