Results 191 to 200 of about 10,406 (258)
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
The integration of ultra‐flexible, all‐organic, field‐effect transistor‐based strain sensors to soft structures is reported for the development of sensorized soft robots. The envisaged application is the development of next‐generation, controllable, and observable soft robotic catheters for endoscopic applications, such as drug delivery. Mechanical and
Usama Mahmood +5 more
wiley +1 more source
Precise and rapid point-of-care quantification of albumin levels in unspiked blood using organic field-effect transistors. [PDF]
Mandal A +5 more
europepmc +1 more source
From Flexible to Conformable Pressure Sensors: Mechanisms, Materials, and Biomedical Applications
This review highlights recent progress, challenges and future opportunities in pressure sensing for advanced biomedical applications. We summarize key transduction mechanisms and emerging material strategies, discuss representative wearable and implantable applications for continuous physiological monitoring and provide a focused perspective on barrier
Rishabh B. Mishra +2 more
wiley +1 more source
Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS2 Memristors
MoS2 memristors typically use evaporated noble metal electrodes. This study compares Pd, Ni, and Al electrodes and sputtered versus evaporated deposition. Pd is passive, while Ni damages MoS2, yielding poor switching. Sputtered Al enables reproducible ECM‐type switching with 95% yield, whereas evaporated Al forms an interfacial oxide that suppresses ...
Dennis Braun +15 more
wiley +1 more source
Compact circuits based on contact‐controlled transistors are well‐suited to unsupervised thermal management, sensitive temperature measurement, or temperature‐stable current references. Demonstrated on flexible microcrystalline silicon and supported by simulation, the approach does not require supply voltage regulation, remains manufacturable across ...
Eva Bestelink +6 more
wiley +1 more source
Composite‐based flexible electronics integrate biodegradable polymers, conductive networks, and multilayer device architectures to balance electrical performance, mechanical durability, and controlled degradation. Interfacial engineering and encapsulation regulate transport stability and operational lifetime, while programmed disassembly enables ...
Sayam, Sangho Cho
wiley +1 more source
Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki +3 more
wiley +1 more source
ZnO Nanowires for Ultraviolet Detection: Recent Developments, Challenges, and Future Outlook
This work provides a comprehensive review of Zinc Oxide (ZnO) nanowires for high‐performance ultraviolet (UV) photodetection. By analyzing unique device physics and various detector architectures, it unveils strategies to overcome current performance limitations regarding speed and sensitivity.
Ala K. Jehad +4 more
wiley +1 more source
Low Thermal Resistance Architectures for AlGaN‐Based Semiconductor Devices
Engineering channel thickness and substrate material significantly improves thermal management in AlGaN RF devices. A 5 nm AlGaN channel integrated on an AlN substrate achieved a record‐low thermal resistance of 3.96 K·mm${\rm K}\cdot{\rm mm}$/W, representing an 88.7% reduction compared with 500 nm AlGaN‐on‐sapphire devices.
Kidus Guye +6 more
wiley +1 more source

