Results 221 to 230 of about 60,091 (297)

A DC Compact Model of an Organic Electrochemical Transistor Based on a Semiconductor Physics and Thermodynamic Approach

Advanced Electronic Materials, EarlyView.
This work presents a physics‐based DC compact model of an Organic Electrochemical Transistor (OECT) that takes into account the faradaic redox reaction in the above threshold regime and incorporates the diffusive current of the subthreshold regime based on semiconductor physics.
Ermias Telahun Teka, Yeohoon Yoon, Laura Teuerle, Tommy Meier, Hans Kleemann, Ghader Darbandy, Benjamin Iniguez   +6 more
wiley   +1 more source

Natural dielectrics for organic field effect transistors: a study on resins derived from larch, spruce and Atlas cedar Pinaceae trees.

Mater Adv
Schimanofsky C, Petritz A, Ban B, Irimia CV, D'Orsi R, Yumusak C, Mayr F, Kanbur Y, Kim S, Operamolla A, Saller K, Schiek M, Salinas Y, Brüggemann O, Teichert C, Xu C, Shim BS, Schwarzinger C, Stadlober B, Sariciftci NS, Irimia-Vladu M.   +20 more
europepmc   +1 more source

Organic Thin‐Film Transistors for Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy, Mohan V. Jacob, Mostafa Rahimi Azghadi   +2 more
wiley   +1 more source

Integration of the evaporable spin-crossover complex [Fe(HB(1,2,4-triazol-1-yl)₃)₂] into organic field-effect transistors: towards multifunctional OFET devices. [PDF]

RSC Adv
Zhang Y, Séguy I, Soroceanu I, Rotaru A, Yu H, Salmon L, Molnár G, Bousseksou A.   +7 more
europepmc   +1 more source

High‐Yield Fabrication of Electrolyte‐Gated Transistors Based on Graphene Acetic Acid

Advanced Electronic Materials, EarlyView.
We fabricated a liquid‐gated transistor based on graphene acetic acid, which is dielectrophoretically deposited, featuring a spatial resolution down to 10 microns. Our method enables a versatile and reproducible fabrication featuring state‐of‐the‐art performance.
Georgian Giani Ilie, Lara Franchin, Ludovica Pradetto Battel, Stefano Bonaldo, Alessandro Paccagnella, Biagio di Vizio, Stefano Agnoli, Rafael C. Hensel, Antonio Gaetano Ricciardulli, Simone Battiston, Mauro Sambi, Francesco Sedona, Paolo Samorì, Stefano Casalini   +13 more
wiley   +1 more source

Crucial role of interfacial thermal dissipation in the operational stability of organic field-effect transistors.

Sci Adv
Tie K, Qi J, Hu Y, Fu Y, Sun S, Wang Y, Huang Y, Wang Z, Yuan L, Li L, Wei D, Chen X, Hu W.   +12 more
europepmc   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Development of metal-free layered semiconductors for 2D organic field-effect transistors.

Chem Soc Rev, 2021
Burmeister D, Trunk MG, Bojdys MJ.
europepmc   +1 more source

Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors

Advanced Electronic Materials, EarlyView.
We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang, Qingli Zhang, Yuting Liu, Binbin Liu, Zhiping Zheng, Guangda Niu, Ling Xu   +6 more
wiley   +1 more source

High Mobility (>200 cm2 V−1 s−1) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity

Advanced Electronic Materials, EarlyView.
We demonstrate a top gate Nb capping TFT architecture that induces controlled oxygen out‐diffusion from the IGZO channel. This mechanism generates shallow donor states and enhances electron delocalization, enabling extended percolation pathways. The resulting thin‐film transistors exhibit high mobility, suppressed leakage currents, and strong optical ...
Hyeonjeong Sun, Yeoeun Yun, Kyubin Hwang, Jiyoung Bang, Seungmin Choi, Seungjae Lee, Taeyang Kim, Suhwon Choi, Eunsuk Choi, Jae Kyeong Jeong, Seung‐Beck Lee   +10 more
wiley   +1 more source