Results 111 to 120 of about 11,048 (302)

Naphthalene flanked diketopyrrolopyrrole based organic semiconductors for high performance organic field effect transistors [PDF]

open access: yes, 2018
Here, we design and synthesize three new diketopyrrolopyrrole (DPP) derivatives with naphthalene, possessing large-scaled p-delocalized electronic structure, as the flanking groups and both linear (n-decyl and n-dodecyl) and branched (2-hexyldecyl)alkyl ...
Caporale, Chiara   +48 more
core   +1 more source

Weaving Intelligence: Thermally Drawn Multimaterial Fibers Toward AI‐Enabled Smart Textiles

open access: yesAdvanced Materials, EarlyView.
Thermally drawn multimaterial fibers are rapidly advancing as intelligent structural units for next‐generation smart textiles. Integrating multimaterial architectures with neuromorphic and spiking‐neural‐network principles enables fabrics that can sense, compute, and adapt autonomously.
Vuong Dinh Trung   +9 more
wiley   +1 more source

Organic nanofibers integrated by transfer technique in field-effect transistor devices

open access: yesNanoscale Research Letters, 2011
The electrical properties of self-assembled organic crystalline nanofibers are studied by integrating these on field-effect transistor platforms using both top and bottom contact configurations.
Tavares Luciana   +3 more
doaj  

Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors

open access: yesNature Communications, 2018
The microstructure of organic semiconductors affects their transport properties, but directly probing this relationship is challenging. He et al. show that step edges act as electron traps on the surfaces of n-type single crystals, resulting in a field ...
Tao He   +9 more
doaj   +1 more source

Physicochemical, self-assembly and field-effect transistor properties of anti- and syn- thienoacene isomers [PDF]

open access: yes, 2011
Physicochemical, self-assembly and field-effect transistor properties of anti- and syn- thienoacene isomersThe relationships between the molecular structure, self-assembly and charge transport properties of two fused-ring thienoacene isomers, a sickle ...
Wen, Shu-Hao   +11 more
core   +1 more source

Intimate Interaction Between Nucleic Acid and Conjugated Polymers in Organic Electrochemical Transistors Enables Ultrasensitive Biomarker Detection

open access: yesAdvanced Materials, EarlyView.
The intimate interaction between negatively charged RNA molecules and conjugated polymers in organic electrochemical transistors (OECTs) in aqueous electrolytes is investigated. It demonstrates that RNA binding reduces the volumetric capacitance of the polymer channel, enabling the development of an ultrasensitive biosensing platform capable of ...
Hong Liu   +7 more
wiley   +1 more source

Ultra-high gain diffusion-driven organic transistor

open access: yesNature Communications, 2016
Organic field-effect transistors offer limited gain due to the large contact resistance and the channel length modulation. Here, Torricelli et al.show a new transistor architecture where the charge injection and extraction are driven by the charge ...
Fabrizio Torricelli   +4 more
doaj   +1 more source

Methanofullerene-coated tetrabenzoporphyrin organic field-effect transistors [PDF]

open access: yes, 2005
Organic field-effect transistors (OFETs) using a solution-processable form of the organic semiconductor tetrabenzoporphyrin were fabricated with a top coating of a soluble nn-type organic semiconductor. The top coating was found to extend the lifetime of
Jerzy Kanicki   +7 more
core   +1 more source

MOCVD‐Grown MoS2 Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

open access: yesAdvanced Materials, EarlyView.
We reveal the electronic origin of hidden interfacial doping in monolayer MoS2 grown by MOCVD, identifying sulfate related and water like species as intrinsic donors. Through dry interface engineering approach, we demonstrate MOCVD‐grown single‐crystal MoS2 wafers as a transfer‐free platform for the reliable evaluation of intrinsic gate stacks and ...
Shuhong Li   +12 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

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