Influence of the Chemical Structure of Perylene Derivatives on the Performance of Honey-Gated Organic Field-Effect Transistors (HGOFETs) and Their Application in UV Light Detection. [PDF]
Fernandes Dias JD +7 more
europepmc +1 more source
Bioinspired Ionochromic Neuromorphic Transistors for Robotic Intelligent Perception
A bioinspired ionochromic neuromorphic transistor couples synaptic conductance modulation with reversible color change through voltage‐controlled ion doping in P3HT/ion gel, mimicking biological synaptic plasticity, and chameleon‐like color regulation.
Quanxing Yao +10 more
wiley +1 more source
A Supramolecular Approach to Enhance the Optoelectronic Properties of P3HT-b-PEG Block Copolymer for Organic Field-Effect Transistors. [PDF]
Kumari P +6 more
europepmc +1 more source
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon +13 more
wiley +1 more source
Diselenophene-Dithioalkylthiophene Based Quinoidal Small Molecules for Ambipolar Organic Field Effect Transistors. [PDF]
Velusamy A +6 more
europepmc +1 more source
Ferroelectric Catalysts in the Hydrogen Evolution Reaction: A Perspective
This perspective summarizes recent advances in ferroelectric (FE) catalysts for the hydrogen evolution reaction (HER). It first introduces HER fundamentals and FE mechanisms, then classifies FE catalysts into single‐phase, single‐atom‐modified, heterostructured, and other engineered types, with representative examples.
Rongxuan Lu +6 more
wiley +1 more source
High-Performance Organic Field-Effect Transistors of Liquid Crystalline Organic Semiconductor by Laser Mapping Annealing. [PDF]
Huang L, Liu F, Bao J, Li X, Wu W.
europepmc +1 more source
Selective Polarity Control of Metal Oxide Semiconductors for Complementary Logic Gates
A scalable electrochemical doping strategy enables in situ p‐to‐n polarity conversion in tin oxide (SnO) thin films using electrolyte gating. Both the pristine p‐type SnO transistor and the electrochemically converted n‐type SnO2 transistor exhibited noticeable and stable electrical performance.
Dong Hyun Park +6 more
wiley +1 more source

