Results 111 to 120 of about 17,124,232 (291)

Unified charge transport in disordered organic field-effect transistors and light-emitting diodes [PDF]

, 2005
De ontdekking dat plastics zich als halfgeleiders kunnen gedragen heeft hun toepassingsgebied verruimd van speelgoed, tassen of meubilair naar elektronische producten zoals flexibele beeldschermen, radiofrequentie identificatie labels, fotocellen and ...
Tanase, Cristina, Tanase, Cristina,
core   +13 more sources

Resolving the High‐k Paradox in Organic Field‐Effect Transistors Through Rational Dielectric Design

Advanced Electronic Materials
Dielectric materials with high relative permittivity, i.e., high‐k dielectrics, are in great demand for application as gate dielectric for the development of field‐effect transistors operating at low voltages.
Beomjin Jeong, Kamal Asadi
doaj   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Electropolymerized Aptasensor for Femtogram‐Level Cytokine Detection

Advanced Materials, EarlyView.
Electropolymerization of 3‐amino‐ʟ‐tyrosine creates ultrathin, smooth, and chemically robust pALT nanofilms with accessible carboxyl functionalities for direct aptamer immobilization. Integrated with fiber‐optic SPR and OECT platforms, these interfaces enable IL‐6 detection down to 100 fg mL−1 and provide a versatile route to bioelectronic sensing ...
Jiyao Yu, Renan Colucci, Rachel X. Shi, Qi Lu, Tommaso Marchesi D'Alvise, Ulrike Kraft, Christopher V. Synatschke, Tanja Weil   +7 more
wiley   +1 more source

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

Advanced Science, 2017
Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐
Wen Li, Fengning Guo, Haifeng Ling, Peng Zhang, Mingdong Yi, Laiyuan Wang, Dequn Wu, Linghai Xie, Wei Huang   +8 more
doaj   +1 more source

Multifunctional organic field-effect transistors

Organic field-effect transistors (OFETs) enable large-area, flexible and wearable electronics. One promising approach to introduce additional functionalities for sensing and memory applications into these devices is the introduction of molecular photoswitches.
openaire   +2 more sources

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

Advanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi, Souta Kurogi, Tomoya Okuda, Riku Kikuchi, Yusuke Wakamoto, Kouei Kubota, Hikaru Sasaki, Kazuhisa Ikeda, Kanako Shojiki, Takahiro Kawamura, Toru Akiyama, Takehito Seki, Takuya Maeda   +12 more
wiley   +1 more source

Contactless charge carrier mobility measurement in organic field-effect transistors [PDF]

, 2014
With the increasing performance of organic semiconductors, contact resistances become an almost fundamental problem, obstructing the accurate measurement of charge carrier mobilities. Here, a generally applicable method is presented to determine the true
Roelofs, W., Li, Weiwei, Li, W Weiwei, Janssen, Rene A. J.,, Li, W., Roelofs, WSC Christian, Kemerink, M Martijn, Leeuw, de, D.M., Kemerink, Martijn, de Leeuw, Dago M.,, de Leeuw, Dago M., Roelofs, W. S. Christian, Leeuw, D M De, Roelofs, W. S. Christian,, Kemerink, Martijn,, Janssen, RAJ René, Roelofs, W.S.C., Janssen, R.A.J.; id_orcid, Kemerink, M., Janssen, R., Janssen, Rene A. J., Janssen, R.A.J., de Leeuw, D., Li, Weiwei,   +23 more
core   +2 more sources

Descriptors to Dynamics: A Materials and Device Perspective on in‐Materio Physical Reservoir Computing for Neuromorphic Edge Intelligence

Advanced Materials, EarlyView.
Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh, Alif Syafiq Kamarol Zaman, Muzhen Xu, Yuki Usami, Saptarshi Das, Hirofumi Tanaka   +5 more
wiley   +1 more source

Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography

Advanced Materials, EarlyView.
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh, Min Gu Lee, Hwayoung Kim, Myeongchan Ko, Jungwan Noh, Taewook Go, Jingyao Yu, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +9 more
wiley   +1 more source