Results 111 to 120 of about 156,715 (302)
Advanced Materials, EarlyView.We reveal the electronic origin of hidden interfacial doping in monolayer MoS2 grown by MOCVD, identifying sulfate related and water like species as intrinsic donors. Through dry interface engineering approach, we demonstrate MOCVD‐grown single‐crystal MoS2 wafers as a transfer‐free platform for the reliable evaluation of intrinsic gate stacks and ...
Shuhong Li +12 more
wiley +1 more source
Advanced Materials, EarlyView.Field‐programmed anisotropy imparts material‐level intelligence to soft composites. Magnetic torque dynamics drive magneto‐piezoelectric nanowires from random dispersion into deterministic axial alignment. The resulting hierarchical percolation networks confine electromechanical coupling to specific axes and intrinsically decouple superposed force ...
Yubin Kim +9 more
wiley +1 more source
Solvent‐Guided Chiral Assemblies and Chemical Doping of OEG‐Functionalized Conjugated Polymers
Advanced Materials, EarlyView.Solvent‐dependent aggregation pathways dictate whether conjugated polymers form chiral lyotropic liquid‐crystalline assemblies or achiral packed aggregates. Mapping solvent‐controlled β₁ and β2 states reveals that weaker backbone association favors β₁ aggregates and reorganizable twisted mesophases, whereas stronger backbone association favors β2 ...
Sanghyun Jeon +10 more
wiley +1 more source
Advanced Materials, EarlyView.A scalable bottom‐up CVD methodology, based on liquid transition metal salt precursors, is presented for the controlled growth of two high‐quality MoSe2–WSe2 heterostructures (HSs): purely lateral (HS I) and hybrid lateral/vertical (HS II), by simply adjusting precursor concentration.
Md Tarik Hossain +16 more
wiley +1 more source
Advanced Materials Interfaces, EarlyView.Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source
Multilayered Digital Microfluidic Chip for Cell‐Based Assays
Advanced Materials Interfaces, EarlyView.A multilayered digital microfluidic (mDMF) chip architecture is introduced to improve throughput and robustness in cell‐based assays. By multilayering electrode components and dielectric layers on glass, this design significantly reduces actuation voltage, maintains reliability, and enables expansion of the operational area with minimum current leakage.
Mert Ozden +2 more
wiley +1 more source
Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors
Advanced Materials Interfaces, EarlyView.We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei +10 more
wiley +1 more source
Proceedings of the National Academy of Sciences of the United States of America, 2004 T. Someya +5 more
semanticscholar +1 more source
Grafted Low‐Leakage Si/AlN p‐n Diodes Enabled by Fluorinated AlN Interface
Advanced Materials Interfaces, EarlyView.This work demonstrates a fluorination‐based interface engineering strategy that transforms oxygen‐terminated AlN surfaces into fluorine‐terminated interfaces for grafted p‐Si/n‐AlN diodes. By combining pseudo‐ALE oxide removal, XeF2 fluorination, and ultrathin SiNx stabilization, the engineered interface suppresses defect‐assisted reverse leakage by ...
Yi Lu +21 more
wiley +1 more source
Advanced Materials Interfaces, EarlyView.A controlled layer‐by‐layer growth process integrates conjugated metal‐organic framework thin films onto a hierarchical 3D laser‐induced graphene scaffold. When incorporated into an extended‐gate field‐effect transistor configuration, this synergistic hybrid platform achieves robust aptamer immobilization, driving highly selective, picomolar‐level ...
Khanh T. M. Le +2 more
wiley +1 more source