Effect of contact resistance in organic field‐effect transistors
Nano Select, 2021 Contact resistance (RC) is universally present in organic field‐effect transistors (OFETs) and the performance of OFETs can be easily affected by RC, which will result in poor performances such as low mobility (μ), large threshold voltage (VT), and non ...
Yanjun Shi +4 more
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Effect of Organic / Inorganic Gate Materials on the Organic Field-Effect Transistors Performance
Iraqi Journal of Physics, 2023 The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications.
Zainab N.Hashim, Estabraq T. Abdullah
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Pentacene Based Organic Field Effect Transistor Using Different Gate Dielectric [PDF]
Engineering and Technology Journal, 2021 This paper presents the electrical behavior of the top contact/ bottom gate of an organic field-effect transistor (OFET) utilizing Pentacene as a semiconductor layer with two distinctive gate dielectric materials Polyvinylpyrrolidone (PVP) and Zirconium ...
Ayat Kadhim +2 more
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Organic Semiconductor Field-Effect Transistors Based on Organic-2D Heterostructures
Frontiers in Materials, 2020 In the past three decades, organic semiconductor field-effect transistors (OFETs) have drawn intense attention as promising candidates for drive circuits of flat panel display, radio frequency identifications, chemical/bio-sensors, and other devices ...
Zi Wang, Lizhen Huang, Lifeng Chi
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Comparison between bulk and held-effect mobility in polyfluorene copolymer field-effect transistors
, 2022 S.25-34Polymer field-effect-transistors (FETs) have been proposed for use in display driver circuitry, information storage and processing, and identity tags. To maximize performance in polymer FETs it is important to have a high carrier mobility. A major
Rawcliffe, R. +2 more
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Diketopyrrolopyrrole Based Organic Semiconductor Materials for Field-Effect Transistors
Frontiers in Chemistry, 2021 Over the past several decades, organic conjugated materials as semiconductors in organic field effect transistors (OFETs) have attracted more and more attention from the scientific community due to their intriguing properties of mechanical flexibility ...
Xiangyu Zou +5 more
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Bias stress effect and recovery in organic field effect transistors: proton migration mechanism [PDF]
, 2010 Organic field-effect transistors exhibit operational instabilities when a gate bias is applied. For a constant gate bias the threshold voltage shifts towards the applied gate bias voltage, an effect known as the bias-stress effect.
Mathijssen, Simon G. J. +18 more
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Organic field-effect transistors
Opto-Electronics Review, 2010 AbstractThe paper reviews the recent year publications concerning organic field-effect transistors (OFETs). A lot of works have been performed to help understanding the structural and electrical properties of materials used to construct OFETs. It has been established that in partially ordered systems, the charge transport mechanism is thermally ...
M. Małachowski, J. Żmija
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Control of threshold voltage of organic field-effect transistors by space charge polarization [PDF]
, 2009 We demonstrate organic field-effect transistors (OFETs) with an ion-dispersed polymer for the gate dielectrics. By applying external electric field (V_), the dispersed ions can migrate by electrophoresis and separated ion pairs form space charge ...
Murata, Hideyuki +2 more
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A structural investigation of novel thiophene-functionalized BEDT-TTF donors for application as organic field-effect transistors [PDF]
, 2014 Three new unsymmetrical thiophene-functionalized bisIJethylenedithio)tetrathiafulvalene (BEDT-TTF) donors (1–3) have been synthesized, characterised and examined as semiconducting materials for organic field-effect transistor (OFET) devices.
Pilkington, M +3 more
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