Results 121 to 130 of about 17,124,232 (291)

Poly(Alkoxythiophene) Rod‐Coil Block Copolymers for Organic Electrochemical Transistors

open access: yesAdvanced Materials, EarlyView.
We present the first synthesis of poly(3‐alkoxythiophene) rod‐coil block copolymers as a new architecture for OMIECs. Incorporating PEG and PLLA coils can enhance device performance beyond the homopolymer. The figure‐of‐merit depends uniquely on coil length.
Junfu Tian   +23 more
wiley   +1 more source

Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics

open access: yesAdvanced Materials, EarlyView.
Conductive MOF thin films are integrated as gate electrodes in semiconductor devices through a photolithography‐compatible patterning strategy. CVD‐grown 2D MOF thin films enable stable operation across bottom‐gate MoS2/MoTe2 field‐effect transistors and top‐gate IGZO arrays, highlighting the potential of conductive MOFs as functional electronic ...
Hyeonwoo Lee   +9 more
wiley   +1 more source

Bioinspired Mechanosensitive Organic Artificial Neuron With Programmable Excitatory and Inhibitory Responses via Nonlinear Mechano‐Electrochemical Coupling

open access: yesAdvanced Materials, EarlyView.
Organic artificial neurons couple mechanical deformation and ionic environments through nonlinear mechano‐electrochemical dynamics. Mechanical strain and electrolyte concentration reshape their nonlinear electrical characteristics, programming excitatory or inhibitory spiking responses that mimic mechanosensitive biological neurons and enable ...
Rassen Boukraa   +4 more
wiley   +1 more source

Hybrid molecular electronic (HME) transistor based on deoxyguanosine derivatives

open access: yes, 2003
Organic Field Effect Transistors II. Edited by Dimitrakopoulos, Christos D.
Giovanni Gottarelli   +26 more
core   +1 more source

Differential Sedimentation and Cryo‐TEM Mapping Resolve Structural Heterogeneity in Conjugated Polymer Nanowires for Programmable Stretchable Electronics

open access: yesAdvanced Materials, EarlyView.
Density‐driven differential sedimentation fractionates solution‐assembled P3HT nanowires into crystalline and disordered constituents. High‐resolution cryo‐TEM directly visualizes the molecular chain packing within individual nanowires in real space, and recombining the fractions programs the mobility–stretchability trade‐off without chemical ...
Junyeon Yoon, Jun Ho Hwang, Eunji Lee
wiley   +1 more source

Giant Anisotropic Spin Absorption in Chiral Hybrid Semiconductors

open access: yesAdvanced Materials, EarlyView.
Researchers uncover that chiral hybrid organic–inorganic semiconductors absorb spin differently depending on its polarization direction. This anisotropic spin absorption is primarily driven by the local symmetry breaking within the layered structure.
Cong Yang   +12 more
wiley   +1 more source

High‐Mobility Chalcogenophene‐Engineered Diketopyrrolopyrrole Mixed Ionic‐Electronic Conductors With Doping Tolerance for Low‐Power Organic Electrochemical Transistors

open access: yesAdvanced Materials, EarlyView.
Chalcogen substitution emerges as a powerful strategy for designing high‐performance OMIECs. In aliphatic–glycol side chain diketopyrrolopyrrole polymers, biselenophene incorporation promotes a planar, polarizable, and doping‐tolerant quinoidal framework, enabling PDPP‐4EG‐Se2 to combine high hole mobility, large µC*, enhanced operational stability ...
Shinbee Oh   +9 more
wiley   +1 more source

1T‐to‐2H Phase Evolution During Epitaxial Growth of Transition Metal Dichalcogenides

open access: yesAdvanced Materials, EarlyView.
During MOCVD growth of MoS2 and WSe2, a transient metallic 1T phase emerges in early, edge‐rich, chalcogen‐deficient domains and declines as the films ultimately coalesce as 2H material. Together, experiments and ReaxFF simulations link domain size, edge stoichiometry, and vacancies to this evolution.
Andrew R. Graves   +8 more
wiley   +1 more source

Electrical characteristics of top-down ZnO nanowire transistors using remote plasma ALD

open access: yes
Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO2 pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3–18.6 µm, are then fabricated
Masaud, T.B.   +9 more
core   +1 more source

Soluble derivatives of perylene and naphthalene diimide for n-channel organic field-effect transistors

open access: yes, 2006
Solution-processed n-type organic field-effect transistors (OFETs) have been fabricated using soluble derivatives of perylene diimide and naphthalene diimide.
Icli, S.   +9 more
core   +1 more source

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