An empirical‐aided active learning framework is developed to optimize high‐throughput laser‐induced photothermal annealing of silicon suboxide anodes. By integrating probabilistic machine learning with empirical domain knowledge, this approach achieves optimal electrochemical performance using limited experiments.
Chaeyoung Park +3 more
wiley +1 more source
Recent Progress in Intrinsically Stretchable Sensors Based on Organic Field-Effect Transistors. [PDF]
Zhang M +6 more
europepmc +1 more source
Recent Advances of Self-Healing Electronic Materials Applied in Organic Field-Effect Transistors. [PDF]
Yue H, Wang Z, Zhen Y.
europepmc +1 more source
A non‐filamentary self‐rectifying HfO2/TiOx resistive random‐access memory integrates H2 annealing with an incremental step pulse with verify algorithm to achieve stable and linear analog conductance modulation. The device enables low‐current 6‐bit multilevel operation while suppressing sneak current in crossbar arrays. Implemented in Transformer‐based
Seonjeong Lee +5 more
wiley +1 more source
Binary Solvent Engineering Modulates the Microstructure of Stretchable Organic Field-Effect Transistors for Highly Sensitive NO<sub>2</sub> Sensing. [PDF]
Jiang X +4 more
europepmc +1 more source
The Origin of Low Contact Resistance in Monolayer Organic Field-Effect Transistors with van der Waals Electrodes. [PDF]
Chen M +4 more
europepmc +1 more source
Bioinspired Ionochromic Neuromorphic Transistors for Robotic Intelligent Perception
A bioinspired ionochromic neuromorphic transistor couples synaptic conductance modulation with reversible color change through voltage‐controlled ion doping in P3HT/ion gel, mimicking biological synaptic plasticity, and chameleon‐like color regulation.
Quanxing Yao +10 more
wiley +1 more source
Self-Aligned Bilayers for Flexible Free-Standing Organic Field-Effect Transistors. [PDF]
Zajaczkowska H +10 more
europepmc +1 more source
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon +13 more
wiley +1 more source
Unveiling the Effects of Hydroxyl-Induced Trap States on the Charge Transport in p- and n-Channel Organic Field-Effect Transistors through Variable-Temperature Characterization. [PDF]
Radiev Y, Wollandt T, Klauk H, Witte G.
europepmc +1 more source

