Results 171 to 180 of about 17,076,184 (291)

Human‐Guided Bayesian Optimization Enables High‐Throughput Laser Annealing of Mesoporous SiOx Anodes for Lithium‐Ion Batteries

open access: yesAdvanced Science, EarlyView.
An empirical‐aided active learning framework is developed to optimize high‐throughput laser‐induced photothermal annealing of silicon suboxide anodes. By integrating probabilistic machine learning with empirical domain knowledge, this approach achieves optimal electrochemical performance using limited experiments.
Chaeyoung Park   +3 more
wiley   +1 more source

Hydrogen‐Stabilized Self‐Rectifying Memristor Arrays for Reliable Multilevel Synapses in Transformer‐Based Keyword Spotting

open access: yesAdvanced Science, EarlyView.
A non‐filamentary self‐rectifying HfO2/TiOx resistive random‐access memory integrates H2 annealing with an incremental step pulse with verify algorithm to achieve stable and linear analog conductance modulation. The device enables low‐current 6‐bit multilevel operation while suppressing sneak current in crossbar arrays. Implemented in Transformer‐based
Seonjeong Lee   +5 more
wiley   +1 more source

Bioinspired Ionochromic Neuromorphic Transistors for Robotic Intelligent Perception

open access: yesAdvanced Science, EarlyView.
A bioinspired ionochromic neuromorphic transistor couples synaptic conductance modulation with reversible color change through voltage‐controlled ion doping in P3HT/ion gel, mimicking biological synaptic plasticity, and chameleon‐like color regulation.
Quanxing Yao   +10 more
wiley   +1 more source

Self-Aligned Bilayers for Flexible Free-Standing Organic Field-Effect Transistors. [PDF]

open access: yesACS Appl Mater Interfaces, 2021
Zajaczkowska H   +10 more
europepmc   +1 more source

Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy‐Efficient Physical Reservoir Computing

open access: yesAdvanced Science, EarlyView.
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon   +13 more
wiley   +1 more source

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