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Fluctuation analysis of an organic semiconductor–insulator interface

Physical Chemistry Chemical Physics, 2013
The space-charge region of an organic semiconductor (OS)-insulator interface is probed by analyzing the spontaneous, thermally driven drain current fluctuations of a field-effect transistor in which the OS forms the gate electrode. This so called "excess drain current noise" is the outcome of local fluctuations of the Fermi level, resulting from ...
Ryan M, West   +2 more
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Electret formation in organic insulating polymers

Conference on Electrical Insulation & Dielectric Phenomena - Annual Report 1973, 1973
It has been known for a long time that after application or removal of a field across a metal-dielectric-metal sandwich a current decreasing with time flows in the external circuit. The absorption currents which flow in polymers on application or removal of a field can be attributed to a number of polarization processes such as an orientation of ...
D. K. Das Gupta, K. Joyner
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Prediction of a Two-Dimensional Organic Topological Insulator

Nano Letters, 2013
Topological insulators (TI) are a class of materials exhibiting unique quantum transport properties with potential applications in spintronics and quantum computing. To date, all of the experimentally confirmed TIs are inorganic materials. Recent theories predicted the possible existence of organic TIs (OTI) in two-dimensional (2D) organometallic ...
Z F, Wang, Ninghai, Su, Feng, Liu
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Organic Insulating Films at Nanometer Scale

MRS Proceedings, 1996
AbstractWe discuss the electrical and photo-electrical properties of monolayers of long hydrocarbon chains (alkyltrichlorosilane molecules) self-assembled on a silicon substrate. It is shown that these monolayers (<3 nm thick) act as high quality insulators : DC conductivity through the monolayers are in the 10-15 S/cm range, energy barrier heights ...
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Organic thin-film transistors having inorganic/organic double gate insulators

Applied Physics Letters, 2004
Bottom-contact organic thin-film transistors (BC OTFTs) based on inorganic/organic double gate insulators were demonstrated. The double gate insulators consisted of tantalum pentoxide (Ta2O5) with high dielectric constant (κ) as the first gate insulator and octadecyltrichlorosilane (OTS) with low κ as the second gate insulator. The devices have carrier
Jun Wang   +4 more
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Emissions from thermal insulations—part 2: evaluation of emissions from organic and inorganic insulations

Building and Environment, 2005
Abstract The aim of this study was to examine microbial, chemical and physical (particle) emissions from organic and inorganic thermal insulations with a multifunctional apparatus developed for this purpose. In addition, basic quality parameters of the insulation materials, including microbial content, ignition residue and density, were determined ...
Minna Koivula   +11 more
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Gate Insulators in Organic Field-Effect Transistors

Chemistry of Materials, 2004
In this paper, we review recent progress in the understanding of insulator/semiconductor interfaces in organic field-effect transistors (OFETs). We would like to emphasize that the choice of gate insulator is as important for high-quality OFET devices as the semiconductor itself, especially because of the unique transport mechanisms operating in them ...
Janos Veres   +3 more
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Organobismuth Molecular Crystals for Organic Topological Insulators

ACS Applied Nano Materials, 2018
Three different types of large and high-quality organobismuth molecular crystals were grown by a physical vapor transport process.
Soyoung Kim   +2 more
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Effects of insulation thickness on the aging of organic insulation in air

1955 CONFERENCE ON ELECTRICAL INSULATION, 1955
Organic insulations composed of paper or cloth base with phenolic or black asphaltic varnish impregnant are shown by extensive tests to have an aging rate in air dependent on the insulation thickness. A change in insulation thickness from that representative of turn insulation to that used for a major voltage barrier may increase its useful life in air
L. C. Whitman, A. L. Scheideler
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