Results 161 to 170 of about 45,384 (263)

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Fermi Level Shifts of Organic Semiconductor Films in Ambient Air. [PDF]

ACS Appl Mater Interfaces
Li X, Zhang Q, Chen Y, Liu X, Braun S, Fahlman M.   +5 more
europepmc   +1 more source

Progress on the Failure Mechanisms and Optimization Strategies on Lithium Iron Phosphate

Advanced Materials Interfaces, EarlyView.
This review centers on LiFeO4 cathodes, outlining their core advantages and performance limitations, then systematically elucidating failure mechanisms, proposing key optimization strategies, and summarizing future research directions that integrate advanced characterization with intelligent design.
Zheng‐Xin Qian, Tianxiang Li, Zhijiang Liu, Mingzhe Yuan, Xiaoyu Gu, Banglong Wan, Qian Zhao, Zuotong Zha, Hang Ma   +8 more
wiley   +1 more source

Thermal Stability of Organic Semiconductor Thin Film Glasses by Local Changes in Spontaneous Orientation Polarization. [PDF]

J Phys Chem B
Ruiz-Ruiz M, Villalobos-Martin A, Bar T, Rodriguez-Tinoco C, Fraxedas J, Capaccioli S, Labardi M, Gonzalez-Silveira M, Rodriguez-Viejo J.   +8 more
europepmc   +1 more source

Defect‐Driven Charge Separation in Ba‐Doped SrTiO3: Correlating Photoelectrochemical Performance With Dye‐Selective Photocatalysis

Advanced Materials Interfaces, EarlyView.
Ba‐doped SrTiO3 perovskites establish a direct correlation between photoelectrochemical activity and photocatalytic performance. Optimized Ba0.5Sr0.5TiO3 exhibits enhanced charge separation, photocurrent generation, and visible‐light‐driven dye degradation through defect‐induced oxygen vacancies and lattice distortion.
Sagar A. Nikam, Somnath Ladhane, Vikas P. Mhaske, Gotan H. Jain, Sandesh R. Jadkar, Shashikant P. Patole, Ganesh E. Patil   +6 more
wiley   +1 more source

Scalable fabrication of precise flexible strain sensors using organic semiconductor single crystals. [PDF]

Sci Technol Adv Mater
Usami Y, Yamashita Y, Murata T, Matsumoto T, Ito M, Watanabe S, Takeya J.   +6 more
europepmc   +1 more source

Band Alignment and Composition of the Buried TiO2/GaInP Interface

Advanced Materials Interfaces, EarlyView.
Buried TiO2$\text{TiO}_2$/GaInP interfaces formed by mild plasma‐enhanced ALD are shown to be largely insensitive to the initial GaInP surface condition. Angle‐dependent photoelectron spectroscopy reveals similar interfacial chemistry and band alignment for phosphorus‐rich and naturally oxidized surfaces, demonstrating a robust pathway for reproducible
David Ostheimer, Sahar Shekarabi, Julius Kühne, Mohammad Amin Zare Pour, Kai Daniel Hanke, Chris Yannic Bohlemann, Juliane Koch, Oliver Bienek, Agnieszka Paszuk, Wolfram Jaegermann, Ian D. Sharp, Thomas Hannappel   +11 more
wiley   +1 more source

Defect engineering in organic semiconductor based metal-dielectric photonic crystals. [PDF]

Sci Rep
Thakuri KS, Cleary T, Allemeier D, Kimura T, Aizawa N, Nakayama KI, Masuhara A, White MS.   +7 more
europepmc   +1 more source

Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors

Advanced Materials Interfaces, EarlyView.
We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei, Yimin Lei, Peixian Li, Hong Wang, Meisen Yi, Qing Zhu, Jiejie Zhu, Zhen Zhang, Yang Yang, Xiaohua Ma, Yue Hao   +10 more
wiley   +1 more source

Analysis of a Flexible Photoconductor, Manufactured with Organic Semiconductor Films. [PDF]

Micromachines (Basel)
Cantera Cantera LA, Sánchez Vergara ME, Hamui L, Mejía Prado I, Flores Huerta A, Martínez Plata TL.   +5 more
europepmc   +1 more source