Results 191 to 200 of about 3,009,751 (351)

Highly Ordered T6 Organic Semiconductor Networks on MoS<sub>2</sub> Nanosheets for Optoelectronic Applications. [PDF]

open access: yesACS Appl Nano Mater
Galizia N   +5 more
europepmc   +1 more source

MOCVD‐Grown MoS2 Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

open access: yesAdvanced Materials, EarlyView.
We reveal the electronic origin of hidden interfacial doping in monolayer MoS2 grown by MOCVD, identifying sulfate related and water like species as intrinsic donors. Through dry interface engineering approach, we demonstrate MOCVD‐grown single‐crystal MoS2 wafers as a transfer‐free platform for the reliable evaluation of intrinsic gate stacks and ...
Shuhong Li   +12 more
wiley   +1 more source

Unexpected Pathway in Organic Semiconductor Nanoparticle Formation. [PDF]

open access: yesACS Nano
Bouchez AE   +5 more
europepmc   +1 more source

Preparation of Hybrid Films Based in Aluminum 8-Hydroxyquinoline as Organic Semiconductor for Photoconductor Applications. [PDF]

open access: yesSensors (Basel), 2023
Sánchez Vergara ME   +5 more
europepmc   +1 more source

Photocatalytic Water Splitting on the Lunar Surface: Prospects for In Situ Resource Utilization

open access: yesAdvanced Materials Interfaces, EarlyView.
Water has been found in craters on the moon nearby locations which are illuminated >80% of the time. Photocatalysis uses energy from sunlight to drive chemical reactions such as water splitting to produce oxygen and hydrogen. It is a scalable technology that requires lighter equipment and utilizes resources available on the moon. ABSTRACT The discovery
Ranjani Kalyan   +6 more
wiley   +1 more source

Non-Fullerene Organic Semiconductor ITIC as a Redox Mediator in Electrochemical Glucose Biosensors. [PDF]

open access: yesSensors (Basel)
Papi MAP   +5 more
europepmc   +1 more source

Unraveling the Effect of Stacking Configurations on Charge Transfer in WS2 and Organic Semiconductor Heterojunctions. [PDF]

open access: yesPrecis Chem, 2023
Zhang S   +9 more
europepmc   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

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