Advanced Materials Interfaces, EarlyView.Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source
Low-voltage organic thin-film transistors based on [n]phenacenes [PDF]
, 2019 Low-voltage p-channel organic thin-film transistors based on [n]phenacene (n = 5, 6 or 7) were fabricated on glass and on flexible poly(ethylene 2,6-naphthalate) (PEN) substrates. For the first time, these phenacenes were combined with two ultrathin gate
Al Ruzaiqi, Afra +6 more
core
Development of Benzobisoxazole-Based Novel Conjugated Polymers for Organic Thin-Film Transistors. [PDF]
Polymers (Basel), 2023 Jeong W, Lee K, Jang J, Jung IH.
europepmc +1 more source
Multilayered Digital Microfluidic Chip for Cell‐Based Assays
Advanced Materials Interfaces, EarlyView.A multilayered digital microfluidic (mDMF) chip architecture is introduced to improve throughput and robustness in cell‐based assays. By multilayering electrode components and dielectric layers on glass, this design significantly reduces actuation voltage, maintains reliability, and enables expansion of the operational area with minimum current leakage.
Mert Ozden +2 more
wiley +1 more source
Poly(3-hexylthiophene)-Based Organic Thin-Film Transistors with Virgin Graphene Oxide as an Interfacial Layer. [PDF]
Polymers (Basel), 2022 Tarekegn EN +3 more
europepmc +1 more source
Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors
Advanced Materials Interfaces, EarlyView.We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei +10 more
wiley +1 more source
Materials for organic thin film transistors [PDF]
, 2007 The invention provides organic thin film transistors including quinacridone derivatives with formula (I). These OTFTs are useful in making flat panel displays, photovoltaic devices and sensors.
core +5 more sources
Surface engineering of zinc phthalocyanine organic thin-film transistors results in part-per-billion sensitivity towards cannabinoid vapor. [PDF]
Commun Chem, 2022 Comeau ZJ +5 more
europepmc +1 more source
Grafted Low‐Leakage Si/AlN p‐n Diodes Enabled by Fluorinated AlN Interface
Advanced Materials Interfaces, EarlyView.This work demonstrates a fluorination‐based interface engineering strategy that transforms oxygen‐terminated AlN surfaces into fluorine‐terminated interfaces for grafted p‐Si/n‐AlN diodes. By combining pseudo‐ALE oxide removal, XeF2 fluorination, and ultrathin SiNx stabilization, the engineered interface suppresses defect‐assisted reverse leakage by ...
Yi Lu +21 more
wiley +1 more source
Engineered molecular stacking crystallinity of bar-coated TIPS-pentacene/polystyrene films for organic thin-film transistors. [PDF]
RSC Adv, 2023 Jo Y +6 more
europepmc +1 more source