Results 181 to 190 of about 13,265 (303)

Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A straightforward method is introduced to produce ion‐gel films with very low surface roughness by employing a solution‐shearing coating process. These ion‐gel films permit the growth of crystalline thin films of various small molecule organic semiconductor molecules directly on top of the ion‐gel layer, thereby enabling “inverted” small molecule ...
Jonathan Perez Andrade, Angelika Wrzesińska‐Lashkova, Anupam Prasoon, Felix Talnack, Katherina Haase, Bernd Büchner, Xinliang Feng, Yana Vaynzof, Mike Hambsch, Yulia Krupskaya, Stefan C. B. Mannsfeld   +10 more
wiley   +1 more source

Investigation of gate dielectric interface on contact resistance of short channel organic thin film transistors (OTFT). [PDF]

PLoS One
Prasanthi L, Panigrahy AK, Tata S, B RBJ, Rao TS, Prakash MD, Kundu SK.   +6 more
europepmc   +1 more source

High-Performance Ambient-Condition-Processed Polymer Solar Cells and Organic Thin-Film Transistors. [PDF]

ACS Omega, 2020
Garai R, Adil Afroz M, Gupta RK, Choudhury A, Iyer PK.   +4 more
europepmc   +1 more source

Stepwise Engineering of Van der Waals Heterostructures for High Current Density in Light Emitting Devices

Advanced Electronic Materials, EarlyView.
A novel strategy for achieving high current density in van der Waals (vdW) heterostructure‐based light‐emitting devices (LEDs) is proposed. Based on this concept, an LED utilizing a WS2/WSe2 heterostructure was fabricated, achieving a current density of 9.4 × 104 A/cm2.
Rei Usami, Koshi Oi, Keisuke Yamada, Jiang Pu, Hao Ou, Takahiko Endo, Yasumitsu Miyata, Taishi Takenobu   +7 more
wiley   +1 more source

On the importance of crystal structures for organic thin film transistors. [PDF]

Acta Crystallogr C Struct Chem
Schweicher G, Das S, Resel R, Geerts Y.
europepmc   +1 more source

Gate-tunable gas sensing behaviors in air-stable ambipolar organic thin-film transistors. [PDF]

RSC Adv, 2020
Kwon H, Yoo H, Nakano M, Takimiya K, Kim JJ, Kim JK.   +5 more
europepmc   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

Reliability of the Transmission Line Method and Reproducibility of the Measured Contact Resistance of Organic Thin-Film Transistors. [PDF]

ACS Nano
Wollandt T, Steffens S, Radiev Y, Letzkus F, Burghartz JN, Witte G, Klauk H.   +6 more
europepmc   +1 more source

Organic Thin Film Transistor

Kobunshi, 2004
openaire   +2 more sources

All‐Solution‐Processed Perovskite Light‐Emitting Transistors Enabled by a Fully Organic Architecture

Advanced Electronic Materials, EarlyView.
Fully solution‐processed light‐emitting transistors based on CsPbBr3 perovskite nanocrystals (Pe‐LETs) are demonstrated using an all‐organic platform. By optimizing film formation and device integration, the Pe‐LETs achieve bright green emission with excellent color purity and a peak external quantum efficiency of 4.17 × 10−3 %, marking a step forward ...
Kelment Zahoaliaj, Alice Fappani, Francesca Pallini, Valentina Bellotti, Nicolò Quaresima, Margherita Bolognesi, Mario Prosa, Luca Beverina, Stefano Toffanin   +8 more
wiley   +1 more source