Results 141 to 150 of about 76,567 (293)

Single-transistor organic electrochemical neurons

open access: yesNature Communications
Abstract Neuromorphic devices that mimic the energy-efficient sensing and processing capabilities of biological neurons hold significant promise for developing bioelectronic systems capable of precise sensing and adaptive stimulus-response. However, current silicon-based technologies lack biocompatibility and rely on operational principles ...
Junpeng Ji   +9 more
openaire   +5 more sources

Backbone Engineering of Carbon‐Centered NHC‐Derived Diradicals: From Electronic State Tuning to High‐Performance Organic Field‐Effect Transistors

open access: yesAdvanced Materials, EarlyView.
The open‐shell nature of diradicals facilitates charge separation, and compounds with moderate diradical character demonstrate remarkable potential in organic field‐effect transistors (OFET) applications due to their low reorganization energies for hole and electron transport.
Xiao‐Xu Liu   +7 more
wiley   +1 more source

Sub-thermionic, ultra-high-gain organic transistors and circuits. [PDF]

open access: yesNat Commun, 2021
Luo Z   +28 more
europepmc   +1 more source

In Situ Regenerative Adduct Assisted p‐Type Doping of Organic Semiconductor

open access: yesAdvanced Materials, EarlyView.
An in situ regenerative adduct‐assisted (IRAA) doping strategy is introduced for p‐type doping of organic semiconductors. A regenerating adduct serves as the dopant, enabling highly efficient doping with a choice of counterions. The generality of this approach provides a scalable route to dope a wide range of hole‐transport materials with high thermal ...
Brijesh K. Patel   +8 more
wiley   +1 more source

Organic–Inorganic Hybrid Synaptic Transistors: Methyl-Silsesquioxanes-Based Electric Double Layer for Enhanced Synaptic Functionality and CMOS Compatibility

open access: yesBiomimetics
Electrical double-layer (EDL) synaptic transistors based on organic materials exhibit low thermal and chemical stability and are thus incompatible with complementary metal oxide semiconductor (CMOS) processes involving high-temperature operations.
Tae-Gyu Hwang, Hamin Park, Won-Ju Cho
doaj   +1 more source

Bioelectrical Interfaces Beyond Excitable Cells: Cancer, Aging, and Gene Expression Modulation

open access: yesAdvanced Materials Interfaces, EarlyView.
ABSTRACT The investigation of biological conductivity has evolved from its classical foundation based on ionic fluxes underpinning cardiac and neuronal excitability to a multifaceted regulator of cellular physiology. Traditional approaches for probing electrical events in living matter focused largely on action potentials recording.
Paolo Cadinu   +14 more
wiley   +1 more source

Controlling Nanostructure in Inkjet Printed Organic Transistors for Pressure Sensing Applications. [PDF]

open access: yesNanomaterials (Basel), 2021
Griffith MJ   +6 more
europepmc   +1 more source

High‐Performance, Paper‐Based Microelectronics via a Micromodular Fabrication Process

open access: yesAdvanced Materials Interfaces, EarlyView.
This study demonstrates high‐performance silicon micromodular transistors on cellulose nanomaterial‐coated paper, with interconnects formed via e‐jet printing. Transistors exhibit excellent electrical properties and maintain performance under applied strain.
Rebecca K. Banner   +9 more
wiley   +1 more source

Melanin/PEDOT:PSS organic synaptic transistors: a step towards sustainable neuromorphic applications

open access: yesNeuromorphic Computing and Engineering
Inspired by the functioning of the human brain, organic synaptic transistors represent a promising avenue for developing neuromorphic technologies. However, achieving sustainability while maintaining performance and functionality remains a critical ...
Natan L Nozella   +5 more
doaj   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

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